通过垂直石墨烯接触形成热TSV提高热导率

M. Nihei, A. Kawabata, T. Murakami, M. Sato, N. Yokoyama
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引用次数: 8

摘要

本文报道了我们之前发现的新型致密垂直和水平石墨烯(DVHG)结构的定制热导率。通过去除水平石墨烯层,形成与电极垂直的石墨烯接触,我们不仅将导热性提高了10倍,而且将导电性提高了100倍。热解石墨在比DVHG更高的温度下生长,通过形成垂直石墨烯接触,显示出1426 W/mK的高导热系数。尽管此时DVHG表现出较差的热性能,但我们发现垂直石墨烯接触形成可以成为实现碳基热透硅通孔(TSV)高导热性的重要技术。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Improved thermal conductivity by vertical graphene contact formation for thermal TSV
This paper reports the tailoring thermal conductivity of novel dense vertical and horizontal graphene (DVHG) structures, which we previously discovered. By removing horizontal graphene layers, resulting in forming vertical graphene contacts to the electrode, we not only improved the thermal conductivity by a factor of 10 but also improved the electrical conductivity by a factor of 100. The pyrolytic graphite, grown at a higher temperature than the DVHG, showed a high thermal conductivity of 1426 W/mK by forming vertical graphene contacts. Although the DVHG showed poor thermal properties at this point, we found that the vertical graphene contact formation can be an important technology to realize high thermal conductivity for carbon-based thermal through-silicon-vias (TSV).
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