用EUV反射率测量法测量EUV电阻折射率n和k值

IF 0.4 4区化学 Q4 POLYMER SCIENCE

Journal of Photopolymer Science and Technology Pub Date : 2021-06-11 DOI:10.2494/photopolymer.34.105

Yosuke Ohta, A. Sekiguchi, T. Harada, Takeo Watanabe

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引用次数: 3

摘要

到目前为止，我们一直在研究测量EUV电阻仿真参数的方法。这些参数包括显影参数、Dill C参数、PAG生成酸的扩散长度和脱保护反应参数。通过使用这些参数，我们试图模拟EUV电阻。因此，我们可以研究降低LER和提高分辨率的条件。本文报道了目前难以测量的EUV光(13.5 nm)下光刻胶折射率n和k值的计算方法，以及吸收参数Dill B参数。我们研究了三种类型的光抗蚀剂:主链断裂型抗蚀剂、化学放大型抗蚀剂和金属抗蚀剂。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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The Measurement of the Refractive Index n and k Value of the EUV Resist by EUV Reflectivity Measurement Method

Up to now, we have been researching methods for measuring the simulation parameters of EUV resist. These parameters include the development parameter, the Dill C parameter, the diffusion length of acid generated from PAG, and the deprotection reaction parameter. By using these parameters, we have attempted to simulate EUV resist. As a result, we could investigate the conditions for reducing LER and for enhancing resolution. We hereby report on the methods of calculating the refractive index n and k values of photoresist with EUV light (13.5 nm), which has been difficult to measure until now, and the Dill B parameter, which is an absorption parameter. The three types of photoresists we investigated are the main chain scission type resist, chemically amplified resist, and metal resist.

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来源期刊

Journal of Photopolymer Science and Technology 化学-高分子科学

CiteScore

1.50

自引率

25.00%

发文量

审稿时长

4-8 weeks

期刊介绍： Journal of Photopolymer Science and Technology is devoted to the publication of articles on the scientific progress and the technical development of photopolymers.