S. Nakaharai, T. Iijima, Shinich Ogawa, Shingo Suzuki, K. Tsukagoshi, S. Sato, Naoki Yokoyama
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Electrostatically-reversible polarity of dual-gated graphene transistors with He ion irradiated channel: Toward reconfigurable CMOS applications
We found that a transistor with a graphene channel irradiated with He ion beams can have a transport gap of up to 380 meV. We made novel dual-gated transistors using such a channel and obtained an on-off ratio up to 103 at 200 K. This novel device has a channel region between dual gates, and the polarity of the transistor (n- or p-type) can be electrostatically reversed by simply flipping the bias polarity of one of the dual gates.
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