基于硅通孔技术的高压单片三维电容器

2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM) Pub Date : 2015-11-12 DOI:10.1109/IITC-MAM.2015.7325655

S. Gruenler, G. Rattmann, T. Erlbacher, A. Bauer, L. Frey

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引用次数: 0

摘要

基于硅通孔技术制备了工作电压高达200v的高压单片3D电容器。在相同的面积和介质厚度下，单片三维电容器的电特性显示出比平面电容器大17倍的电容密度。研究了不同形状和几何形状的三维电容器结构对其电性能的影响。

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High-voltage monolithic 3D capacitors based on through-silicon-via technology

High-voltage monolithic 3D capacitors operating at breakdown voltages up to 200 V are fabricated based on through silicon-via technology. Electric characteristics of monolithic 3D capacitors exhibit a capacitance density of 17 times larger than that of planar capacitors with the same area and dielectric thickness. Impact of the 3D capacitors' architecture on their electrical properties is studied for various patterns and geometries.

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来源期刊

2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)

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