cu - sam -环氧体系的多尺度界面分层模型

H. Fan, C. Wong, M. Yuen
{"title":"cu - sam -环氧体系的多尺度界面分层模型","authors":"H. Fan, C. Wong, M. Yuen","doi":"10.1109/ICEPT.2008.4606989","DOIUrl":null,"url":null,"abstract":"Interfacial delamination, due to the presence of dissimilar material systems, is one of the primary concerns in electronic package design. The mismatch in coefficient of thermal expansion between the different layers in the packages can generate high interfacial stresses due to thermal loading during fabrication and assembly. More and more functional materials at the nano scale are, such as self-assembly monolayer (SAM) and CNT, used in electronic packaging for the improvement of the interfacial performance, traditional continuum model without considering these nano materials are obviously not suitable to study performance of electronic packages. In this study, a multi-scale model was built to investigate interfacial failure between EMC and SAM coated copper substrate. The interfacial material behavior was derived from the molecular dynamics simulation. The constitutive relation for the EMC-SAM-Cu interface under tensile load was derived from MD simulation. Tapered double cantilever beam tests (TDCB) were conducted on the laminated specimens to quantify the load during delamination propagation along the EMC-Cu interface with SAM and without SAM. Finite element models of the DCB test were built using ANSYS with interfacial element at the Cu-EMC interface. The constitutive relations from MD simulations in the form of a traction-displacement plot were introduced into the cohesive zone model to study the constitutive response of the EMC-Cu interface under the tensile loading, which is traversed across the length scale from nanoscale to macroscale. and assigned to the continuum model. The critical loading forces for the EMC/Cu interface with SAM and without SAM were obtained from the multi-scale model. It was found that interfacial strength between EMC and Cu substrate could be improved by SAM. Based on the proposed method, the predicted results were found to be comparable with those from experimental measurement.","PeriodicalId":6324,"journal":{"name":"2008 International Conference on Electronic Packaging Technology & High Density Packaging","volume":"148 Pt 4 1","pages":"1-5"},"PeriodicalIF":0.0000,"publicationDate":"2008-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"A multi-scale interfacial delamination model of Cu-SAM-epoxy systems\",\"authors\":\"H. Fan, C. Wong, M. Yuen\",\"doi\":\"10.1109/ICEPT.2008.4606989\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Interfacial delamination, due to the presence of dissimilar material systems, is one of the primary concerns in electronic package design. The mismatch in coefficient of thermal expansion between the different layers in the packages can generate high interfacial stresses due to thermal loading during fabrication and assembly. More and more functional materials at the nano scale are, such as self-assembly monolayer (SAM) and CNT, used in electronic packaging for the improvement of the interfacial performance, traditional continuum model without considering these nano materials are obviously not suitable to study performance of electronic packages. In this study, a multi-scale model was built to investigate interfacial failure between EMC and SAM coated copper substrate. The interfacial material behavior was derived from the molecular dynamics simulation. The constitutive relation for the EMC-SAM-Cu interface under tensile load was derived from MD simulation. Tapered double cantilever beam tests (TDCB) were conducted on the laminated specimens to quantify the load during delamination propagation along the EMC-Cu interface with SAM and without SAM. Finite element models of the DCB test were built using ANSYS with interfacial element at the Cu-EMC interface. The constitutive relations from MD simulations in the form of a traction-displacement plot were introduced into the cohesive zone model to study the constitutive response of the EMC-Cu interface under the tensile loading, which is traversed across the length scale from nanoscale to macroscale. and assigned to the continuum model. The critical loading forces for the EMC/Cu interface with SAM and without SAM were obtained from the multi-scale model. It was found that interfacial strength between EMC and Cu substrate could be improved by SAM. Based on the proposed method, the predicted results were found to be comparable with those from experimental measurement.\",\"PeriodicalId\":6324,\"journal\":{\"name\":\"2008 International Conference on Electronic Packaging Technology & High Density Packaging\",\"volume\":\"148 Pt 4 1\",\"pages\":\"1-5\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-07-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 International Conference on Electronic Packaging Technology & High Density Packaging\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICEPT.2008.4606989\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 International Conference on Electronic Packaging Technology & High Density Packaging","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEPT.2008.4606989","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7

摘要

由于存在不同的材料系统,界面分层是电子封装设计中的主要问题之一。封装中不同层之间的热膨胀系数不匹配会在制造和组装过程中由于热载荷而产生高界面应力。越来越多的纳米级功能材料,如自组装单层(SAM)和碳纳米管,被用于电子封装中以改善界面性能,传统的连续介质模型不考虑这些纳米材料显然不适合研究电子封装的性能。在本研究中,建立了一个多尺度模型来研究电磁兼容与SAM涂层铜衬底之间的界面失效。通过分子动力学模拟得到了界面材料的行为。通过MD模拟得到了拉伸载荷作用下EMC-SAM-Cu界面的本构关系。采用锥形双悬臂梁试验(TDCB)对叠合试样进行了分层试验,以量化有SAM和无SAM时沿mc - cu界面分层传播过程中的载荷。利用ANSYS软件建立了DCB试验的有限元模型,并在Cu-EMC界面处设置了界面单元。将MD模拟的本构关系以牵引-位移图的形式引入内聚区模型,研究了拉伸载荷作用下EMC-Cu界面从纳米尺度到宏观尺度的本构响应。并被分配到连续体模型。通过多尺度模型得到了具有和不具有SAM的EMC/Cu界面的临界载荷力。结果表明,SAM可以提高EMC与Cu衬底之间的界面强度。基于该方法的预测结果与实验测量结果基本一致。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A multi-scale interfacial delamination model of Cu-SAM-epoxy systems
Interfacial delamination, due to the presence of dissimilar material systems, is one of the primary concerns in electronic package design. The mismatch in coefficient of thermal expansion between the different layers in the packages can generate high interfacial stresses due to thermal loading during fabrication and assembly. More and more functional materials at the nano scale are, such as self-assembly monolayer (SAM) and CNT, used in electronic packaging for the improvement of the interfacial performance, traditional continuum model without considering these nano materials are obviously not suitable to study performance of electronic packages. In this study, a multi-scale model was built to investigate interfacial failure between EMC and SAM coated copper substrate. The interfacial material behavior was derived from the molecular dynamics simulation. The constitutive relation for the EMC-SAM-Cu interface under tensile load was derived from MD simulation. Tapered double cantilever beam tests (TDCB) were conducted on the laminated specimens to quantify the load during delamination propagation along the EMC-Cu interface with SAM and without SAM. Finite element models of the DCB test were built using ANSYS with interfacial element at the Cu-EMC interface. The constitutive relations from MD simulations in the form of a traction-displacement plot were introduced into the cohesive zone model to study the constitutive response of the EMC-Cu interface under the tensile loading, which is traversed across the length scale from nanoscale to macroscale. and assigned to the continuum model. The critical loading forces for the EMC/Cu interface with SAM and without SAM were obtained from the multi-scale model. It was found that interfacial strength between EMC and Cu substrate could be improved by SAM. Based on the proposed method, the predicted results were found to be comparable with those from experimental measurement.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信