稳健的多比特可编程闪存使用谐振隧道屏障

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. Pub Date : 2005-12-05 DOI:10.1109/IEDM.2005.1609493

S. Kim, Seungjae Baik, Z. Huo, Y. Noh, Chul-Sung Kim, J. Han, I. Yeo, U. Chung, J. Moon, B. Ryu

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引用次数: 5

摘要

首次制备了一种基于SiO2/ A - si / SiO2谐振隧道势垒的新型多比特闪存。具有共振隧道势垒的sonos型存储器只能在由量子隧道条件决定的优先偏置条件下编程。通过这样做，多级编程阈值电压Vth的分散大大减少，并且可以实现高可靠的数据存储。此外，程序/擦除速度、数据保留、耐用性和读取干扰特性也优于传统的SiO2隧道屏障

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Robust multi-bit programmable flash memory using a resonant tunnel barrier

A novel multi-bit flash memory using a SiO2/a-Si/SiO 2 resonant tunnel barrier was fabricated for the first time. The SONOS-type memory with a resonant tunnel barrier is programmed only at preferential bias conditions determined by quantum tunneling conditions. By doing so, the dispersion of multi-level programmed threshold voltages, Vth, are drastically reduced, and highly reliable data storage is possible. Moreover, program/erase speed, data retention, endurance and read disturb characteristics were also shown to be better than that of a conventional SiO2 tunnel barrier

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IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.

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