C. Bolognesi, H.G. Liu, N. Tao, L. Zheng, X. Zhang, S. Watkins
{"title":"InP/GaAsSb型h异质结构体系及其在高速DHBTs和光电探测器中的应用:物理，惊喜和机遇(特邀)","authors":"C. Bolognesi, H.G. Liu, N. Tao, L. Zheng, X. Zhang, S. Watkins","doi":"10.1109/IEDM.2005.1609470","DOIUrl":null,"url":null,"abstract":"The InP/GaAsSb/InP \"type-II\" heterostructure system is of interest for high-speed devices such as photodetectors and double heterostructure bipolar transistors (DHBTs) because its band alignment enables the straightforward injection of electrons from a ~0.72 eV p-type GaAsSb layer into n-type InP without any need for interface grading. We briefly review the salient features of the InP-GaAsSb system, and consider some of the surprising device characteristics encountered in InP/GaAsSb -based devices. In several respects, the InP/GaAsSb system is shown to offer very appealing opportunities for the development of high-speed NpN DHBTs with ultrathin base and collector layers","PeriodicalId":13071,"journal":{"name":"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.","volume":"236 1","pages":"779-782"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"The InP/GaAsSb type-H heterostructure system and its application to high-speed DHBTs and photodetectors: physics, surprises, and opportunities (INVITED)\",\"authors\":\"C. Bolognesi, H.G. Liu, N. Tao, L. Zheng, X. Zhang, S. Watkins\",\"doi\":\"10.1109/IEDM.2005.1609470\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The InP/GaAsSb/InP \\\"type-II\\\" heterostructure system is of interest for high-speed devices such as photodetectors and double heterostructure bipolar transistors (DHBTs) because its band alignment enables the straightforward injection of electrons from a ~0.72 eV p-type GaAsSb layer into n-type InP without any need for interface grading. We briefly review the salient features of the InP-GaAsSb system, and consider some of the surprising device characteristics encountered in InP/GaAsSb -based devices. In several respects, the InP/GaAsSb system is shown to offer very appealing opportunities for the development of high-speed NpN DHBTs with ultrathin base and collector layers\",\"PeriodicalId\":13071,\"journal\":{\"name\":\"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.\",\"volume\":\"236 1\",\"pages\":\"779-782\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-12-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2005.1609470\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2005.1609470","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The InP/GaAsSb type-H heterostructure system and its application to high-speed DHBTs and photodetectors: physics, surprises, and opportunities (INVITED)
The InP/GaAsSb/InP "type-II" heterostructure system is of interest for high-speed devices such as photodetectors and double heterostructure bipolar transistors (DHBTs) because its band alignment enables the straightforward injection of electrons from a ~0.72 eV p-type GaAsSb layer into n-type InP without any need for interface grading. We briefly review the salient features of the InP-GaAsSb system, and consider some of the surprising device characteristics encountered in InP/GaAsSb -based devices. In several respects, the InP/GaAsSb system is shown to offer very appealing opportunities for the development of high-speed NpN DHBTs with ultrathin base and collector layers
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