硅基oled低电压带隙参考电路的设计

2008 International Conference on Electronic Packaging Technology & High Density Packaging Pub Date : 2008-07-28 DOI:10.1109/ICEPT.2008.4607007

Meihua Xu, Jian Wu, F. Ran, Tiezhu Li

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引用次数: 6

摘要

本文提出了一种用于硅基oled的低压带隙参考电路的设计。为了使运放工作在高增益区域，在运放中采用升压技术来提高栅极驱动能力。参考源采用一阶温度补偿设计，消除了温度对电压源的影响。同时，由于设计的放大器工作在弱反转层，大大降低了功耗。在包车的0.35 um 2-聚4-金属3.3 V/18 V高压工艺中进行了仿真，结果表明所提出的设计满足预定要求，实现了源电压在1.8 V以下的应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Design of a low voltage band-gap reference circuit for OLED-On-Silicon

This paper presents a design of low voltage band-gap reference circuit for OLED-on-silicon. In order to make the op-amp working in the high-gain area, the boost technique is used in the amplifier to increase the gate drive ability. The reference source uses first-order temperature compensation design to eliminate the temperature influence to voltage source. Simultaneously, the power dissipation is greatly decrease because the amplifier designed is working in the weak inversion layer. The simulation is conducted in chartered 0.35 um 2-poly 4-metal 3.3 V/18 V high voltage process, and the results show that the proposed design meets the scheduled requirement and realizes the application of source voltage under 1.8 V.

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2008 International Conference on Electronic Packaging Technology & High Density Packaging

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