ITO膜在氢氧化钠溶液中阳极和阴极极化的电化学腐蚀行为

W. Hao, Zhong Cheng, Li Jin, J. Yiming
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引用次数: 5

摘要

采用电化学方法研究了氧化铟锡(ITO)薄膜在氢氧化钠溶液中的电化学腐蚀行为。研究了ITO薄膜在阳极极化和阴极极化下的循环伏安特性。通过透射光谱、扫描电镜(SEM)和x射线衍射(XRD)分析表征了光学透射率、腐蚀形貌和腐蚀产物的鉴定。阳极极化后ITO膜保持稳定。相比之下,在阴极极化(与饱和甘汞电极(SCE)相比,约为-1.3 V)时发生了严重的腐蚀。同时,透光率大大降低。结果表明,ITO中的部分Sn4+以Sn氢氧化物的形式被还原到低金属态,并附着在表面。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electrochemical corrosion behaviors of ITO films at anodic and cathodic polarization in sodium hydroxide solution
The electrochemical corrosion behaviors of indium tin oxides (ITO) films were investigated by electrochemical methods in sodium hydroxide solutions. Cyclic voltammetries of ITO films at both anodic and cathodic polarization were carried out. Transmittance spectra, scanning electron microscopy (SEM) and X-ray diffraction (XRD) analysis were used for characterization of the optical transmittance, the corrosion morphology and identification of corrosion product. ITO film remained stable after anodic polarization. In contrast, serious corrosion occurred at cathodic polarization (approximately -1.3 V vs. saturated calomel electrode (SCE)). Meanwhile, optical transmittance decreased greatly. The results showed that some of Sn4+ in the ITO is reduced to the lower metal state in the form of hydroxides of Sn, which attached to the surface.
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