解释大面积场发射体的场发射方程

IF 1.4 4区工程技术

Journal of Vacuum Science & Technology B Pub Date : 2021-12-02 DOI:10.1116/6.0001683

D. Biswas

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引用次数: 3

摘要

无论是单发射体还是大面积场发射体(LAFE)，通常都使用Murphy-Good(或Fowler-Nordheim)图的斜率和截距来表征，用于提取场增强因子和发射面积。利用最近开发的一种LAFE屏蔽模型，对基本假设的有效性进行了研究。结果表明，在LAFE情况下，增强因子和超发射体有效数量随外加场变化的速率对斜率有贡献。因此，发射面积与LAFE的斜率和截距都有关。当平均间距远大于发射极高度时，通常的斜率和截距解释可以恢复。

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Interpreting the field emission equation for large area field emitters

Both single emitters and large area field emitters (LAFE) are generally characterized using the slope and intercept of a Murphy-Good (or Fowler-Nordheim) plot which are used to extract the field enhancement factor and the emission area. Using a shielding model that has been developed recently for a LAFE, the validity of the underlying assumption is investigated. It is found that in case of a LAFE, the slope has contributions from the enhancement factor as well as the rate at which the effective number of super-emitters changes with the applied field. As a consequence, the emission area is related to both the slope and the intercept in a LAFE. When the mean spacing in a LAFE is much larger than the height of emitter, the usual interpretation of the slope and intercept are recovered.

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来源期刊

Journal of Vacuum Science & Technology B 工程技术-工程：电子与电气

自引率

14.30%

发文量

审稿时长

2.5 months

期刊介绍： Journal of Vacuum Science & Technology B emphasizes processing, measurement and phenomena associated with micrometer and nanometer structures and devices. Processing may include vacuum processing, plasma processing and microlithography among others, while measurement refers to a wide range of materials and device characterization methods for understanding the physics and chemistry of submicron and nanometer structures and devices.