基于晶格玻尔兹曼方法的晶圆键合过程边缘凝聚数值研究

Jung Shin Lee, Jun Hyung Kim, Daniel Min Woo Rhee
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引用次数: 1

摘要

直接晶圆键合工艺在半导体生产中被广泛应用,因为它具有一次连接多个芯片的优点。在键合过程中,顶部晶片发生变形,晶片表面从键合前向边缘倾斜,从而形成一个楔形流场,向边缘的间隙更大。在该流场中,流速加速,并且由于压降而膨胀。膨胀也降低了温度。当温度足够低时,水蒸气聚集,液滴在晶圆片边缘凝结。由于无法观察到晶圆之间的流动空间,因此对缩聚还原的实验是困难的。只有通过数值分析才能观察晶圆流场中出现的现象,并利用这些现象来改进工艺配方。在本研究中,采用数值分析的方法来观察在边缘处发生的凝结。数值方法实现了基于晶格玻尔兹曼的微尺度相变和界面捕获,并通过加入氢键静电势等原子间电位为分子行为增加了理论基础。利用该数值模型分析了键合过程中晶圆之间的流动,并模拟了温度下降和蒸汽凝结过程。观察到蒸汽密度随时间的增加先减小后增大。当温度足够低时,蒸汽聚集,蒸汽密度再次增加。在2.5℃以下,蒸汽密度迅速上升。表面的润湿性越高,冷点处的蒸汽密度越低。由于晶圆片表面的高润湿性,蒸汽分散在整个表面,因此在冷点聚集的蒸汽量减少。当润湿性高于一定水平时,形成的液滴宽度随着润湿性的增加而增大的规律。因此,出现了具有最小液滴宽度的最佳接触角,但就结合强度而言,这可能不是最佳的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Numerical study of edge condensation in wafer to wafer bonding process with lattice Boltzmann approach
Direct wafer bonding process is applied in semiconductor production because of the advantage of attaching several chips at once. During the bonding process, the top wafer is deformed and the wafer surface is oblique from the bonding front to the edge, thereby forming a wedge-shaped flow field with a wider gap toward the edge. In this flow field, acceleration of the flow rate occurs and expansion due to pressure drop occurs. This expansion also lowers the temperature. When the temperature is sufficiently low, the vapor aggregates and the droplet condenses at the edge for wafer. Experiment on condensation reduction is difficult because of the inability to observe the flow space between wafers. It is only through numerical analysis to observe phenomena occurring in the wafer flow filed and use them to improve process recipe. In this study, numerical analysis is used to observe the condensation occurring at the edge. Numerical method enables the phase change of microscale and interface capture based on lattice Boltzmann, and added the theoretical basis for molecular behavior by adding interatomic potential including electrostatic potential of hydrogen bond. This numerical model was used to analyze the flow between wafers during bonding process and to simulate temperature drop and vapor condensation. It was observed that the vapor density decreased with time and then increased again. When the temperature is sufficiently low, the vapor aggregates and the density of the vapor increases again. A rapid rising in vapor density was observed below 2.5°C. The higher the wettability of the surface, the lower the vapor density at the cold spot. Due to the high wettability of the wafer surface, vapor is dispersed throughout the surface, and thus the amount of vapor that aggregates at the cold spot is reduced. If the wettability is higher than a certain level, a regime in which the width of the generated droplet increases with wettability appears. As a result, an optimum contact angle with minimum droplet width appears, but this may not be optimal in terms of bonding strength.
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