宽I/O 3DIC的热特性

Kuo-ying Tsai, Shih-chang Ku, W. Chang, H. Tsai
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引用次数: 3

摘要

采用TSV直径、微凸点材料和TSV分配策略等参数化因素,研究了宽I/O封装三维集成电路结构的热性能。研究发现,TSV直径和微凸点材料对所示宽I/O封装的热性能没有显著影响。但是,热点的位置会随着TSV的分配而改变。结果表明,热二极管的较好位置将接近TSV或模具角。此外,本工作还得出结论,“TSV外设”分配比其他分配具有更好的冷却效果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Thermal characterization of a wide I/O 3DIC
The thermal performance of a specific 3D IC structure — a wide I/O package is investigated with parameterized factors like TSV diameter, material of micro bumps, and TSV allocation strategy. TSV diameter and material of micro bump are found no significant effect on thermal performance of the illustrated wide I/O package. However, the hot spot location is changed by the TSV allocation. The results suggest the better locations for thermal diodes would be close to the TSV or die corners. Also this work concludes that the “TSV peripheral” allocation performs the better cooling than the others.
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