无流底填料封装倒装芯片的空隙形成研究

S. Lee, M. Yim, R. Master, C. Wong, D. Baldwin
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引用次数: 26

摘要

先进的封装内倒装芯片(FCIP)工艺采用无流底填材料,用于高I/O密度和细间距互连应用,这对必须实现高电气互连成品率和高可靠性性能的组装工艺提出了挑战。关于高可靠性,在FCIP器件的无流动底填充组装过程中,在钎料凸起之间或钎料凸起内部形成的空隙通常被认为是影响装配良率和可靠性性能的关键问题之一。本文通过不同类型试验车的系统试验,探讨了采用无流底填法的FCIP底填空穴形成的可能原因。例如,在先进的FCIP组件中,研究了工艺条件、材料性能以及焊料凸起与无流动底填材料之间的化学反应对空洞形成行为的影响。在本研究中,发现在焊料润湿和钎料固化过程中,焊料与钎料之间的化学反应是使用无流动钎料的高I/O和细间距FCIP组件中形成空隙的最重要因素之一。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Void Formation Study of Flip Chip in Package Using No-Flow Underfill
The advanced flip chip in package (FCIP) process using no-flow underfill material for high I/O density and fine-pitch interconnect applications presents challenges for an assembly process that must achieve high electrical interconnect yield and high reliability performance. With respect to high reliability, the voids formed in the underfill between solder bumps or inside the solder bumps during the no-flow underfill assembly process of FCIP devices have been typically considered one of the critical concerns affecting assembly yield and reliability performance. In this paper, the plausible causes of underfill void formation in FCIP using no-flow underfill were investigated through systematic experimentation with different types of test vehicles. For instance, the effects of process conditions, material properties, and chemical reaction between the solder bumps and no-flow underfill materials on the void formation behaviors were investigated in advanced FCIP assemblies. In this investigation, the chemical reaction between solder and underfill during the solder wetting and underfill cure process has been found to be one of the most significant factors for void formation in high I/O and fine-pitch FCIP assembly using no-flow underfill materials.
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