R. Guldi, J. Shaw, J. Ritchison, S. Oestreich, K. Davis, R. Fiordalice
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Characterization of copper voids in dual damascene processes
The introduction of copper dual Damascene processing into integrated circuits has brought about a host of new defectivity issues, especially those related to pitting and voiding. These defects must be understood and eliminated to achieve competitive manufacturing yields and assure device reliability.
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