铜引线上镀锡-铜镀层晶须萌生与压应力的关系

Takahiko Kato, H. Akahoshi, Masato Nakamura, T. Terasaki, T. Iwasaki, T. Hashimoto, A. Nishimura
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引用次数: 15

摘要

为了评估涂层应力对IC封装引线晶须形成的影响,采用有限元分析方法研究了涂层中的应力分布。两种不同的引线框架样品,由相同的锡铜涂层组成,在两种不同的铜引线框架材料上,即铜铁(以下简称CUFE;对应CDA号C19400)和铜铬(CUCR;CDA编号C18045),对涂层表面的晶须萌生行为进行了研究。两种样品的晶须萌生趋势有显著差异。也就是说,在室温下长期存放后,CUCR样品上的涂层未形成晶须,而CUFE样品上的涂层形成了长晶须(最大长度超过200 μm)。对引线框架样品的有限元分析表明,涂层具有双向应力梯度,即一个应力梯度指向引线框架表面,另一个应力梯度指向引线框架基体。它还表明了两个样品的应力分布之间的差异。结果表明,涂层的晶界(GBs)向CUFE样品表面方向的应力梯度大于CUCR样品。结果表明,CUFE涂层中沿GB方向的锡原子通量大于CUCR涂层,这是因为沿GB方向的原子通量与应力梯度成正比。这与上述试样的晶须起生行为一致。因此,我们得出结论,在CUFE样品中,晶须要么来自GB顶部的表面晶粒,要么来自位于同一GB两侧的表面晶粒。为了证实这一结论,研究了锡扩散位点与晶须形成位点之间的关系。原子扩散的分子动力学模拟表明,当压应力作用于原子的正反方向时,锡的主要扩散位点是原子的正反方向。对CUFE试样的晶须根与涂层显微组织的相关性研究表明,晶须根位于涂层中GB交叉点的顶部。这些结果表明,晶须的起始位点与锡的主要扩散位点相关,并且每个晶须的起始点要么是位于晶须顶部的表面晶粒,要么是位于同一晶须两侧的表面晶粒。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Correlation Between Whisker Initiation and Compressive Stress in Electrodeposited Tin–Copper Coating on Copper Leadframes
To evaluate the contribution of coating stress to whisker initiation from IC package leads, the stress distribution in the coating was investigated by finite-element analysis (FEA). Two different leadframe samples, which were composed of the same tin-copper coating on two different copper-leadframe materials, namely, copper-iron (hereafter, CUFE; corresponding to CDA number C19400) and copper-chromium (CUCR; CDA number C18045), were used to examine the whisker-initiation behavior on the coating surfaces. The two samples showed significantly different tendencies of whisker initiation from the coating. That is, after long-term storage at room temperature, no whisker initiation was observed on the coating on the CUCR sample, whereas long whiskers (with a maximum length of more than 200 μm) were formed from the coating on the CUFE sample. The FEA calculation on the leadframe samples revealed that the coatings had a two-directional stress gradient, namely, one gradient toward the surface and another toward the base leadframe material. It also indicated a difference between the stress distributions in the two samples. The gradient of normal stress on the coating's grain boundaries (GBs), toward the surface of the CUFE sample, was found to be larger than that in the CUCR sample. This result implies that the tin-atom flux along a GB in the coating on the CUFE sample was larger than that on the CUCR sample because the atom flux along the GB was proportional to the stress gradient. It agrees with the above-mentioned whisker-initiation behaviors in the samples. We thus conclude that in the CUFE sample, a whisker initiates either from a surface grain immediately on top of a GB or from surface grains located on both sides of the same GB. To confirm this conclusion, the correlation between the tin-diffusion sites and whisker formation sites was investigated. Simulation of atom diffusion by molecular dynamics indicated that the dominant tin-diffusion site is a GB when compressive stress is applied in the direction normal to the GB. Investigation of the correlation between the whisker roots and coating microstructures of the CUFE sample showed that the whisker roots were located on top of GB intersections in the coating. These results indicate that whisker-initiation sites are correlated with dominant tin-diffusion sites and that each whisker initiates either from a surface grain located immediately on top of a GB or from surface grains located on both sides of the same GB.
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