铜纳米互连中电子传递的蒙特卡罗模拟:LER/LWR对电阻退化的抑制

2012 International Electron Devices Meeting Pub Date : 2012-12-01 DOI:10.1109/IEDM.2012.6479140

T. Kurusu, H. Tanimoto, M. Wada, A. Isobayashi, A. Kajita, N. Aoki, Y. Toyoshima

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引用次数: 1

摘要

利用半经典蒙特卡罗方法模拟金属丝中的电子传递，研究了线边缘粗糙度对纳米铜丝电阻的影响。给出了表征LER的参数如振幅、相关长度和线边之间的相关性对电阻的依赖关系，并讨论了抑制LER/LWR引起的电阻退化的最佳导线结构。

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A Monte Carlo simulation of electron transport in Cu nano-interconnects: Suppression of resistance degradation due to LER/LWR

The effect of Line-Edge Roughness (LER) on electrical resistance in nanoscale Cu wires is investigated utilizing a semi-classical Monte Carlo method for simulating electron transport in metallic wires. Dependence of parameters characterizing LER such as amplitude, correlation length, and correlation between line-edges on electrical resistance is presented, and an optimal wire structure to suppress resistance degradation due to LER/LWR is discussed.

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2012 International Electron Devices Meeting

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