N&K分析仪在OLED失效分析中的应用研究

2008 International Conference on Electronic Packaging Technology & High Density Packaging Pub Date : 2008-07-28 DOI:10.1109/ICEPT.2008.4607152

Q. Fang, Yafang Peng, H. Yu

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引用次数: 1

摘要

采用N&K分析仪对ITO/NPB/Alq3/LiF/Al多层结构的有机发光二极管(OLED)在老化实验前后的各层厚度进行了研究。通过对比不同曝光时间和失效样品在环境气氛下的膜厚，发现Alq3和LiF层的膜厚变化主要发生在Alq3和LiF层，而ITO和NPB层的膜厚变化不明显。破坏过程中Alq3层减少，LiF层增加。在电气失效前，器件的膜厚均匀性良好;但当发生电气故障时，这种均匀性显然已被破坏。因此，在OLED多超薄层结构难以用传统方法表征的情况下，N&K分析仪是一种有效的OLED失效分析新方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A study on application of N&K Analyzer in OLED failure analysis

The thickness of each layer of the OLED (Organic Light Emitting Diode) with the multi-layer structure of ITO/NPB/Alq3/LiF/Al was studied by N&K Analyzer before and after aging experiments. Through comparing the film thickness when kept in ambient atmosphere with different exposure duration and failed samples, main thickness changes occur in the Alq3 and LiF layers while the ITO and NPB layer had no dramatic changes in thickness. The trend is Alq3 layer decrease and LiF layer increase in the process of failure. Before electrical failure, the devices exhibit good uniformity in film thickness; but when electrical failure occurs, this uniformity has obviously been destroyed. So it is proved that N&K Analyzer is an effective new method for OLED failure analysis especially in the condition that it is very difficult to characterize the OLEDpsilas multi-ultra thin-layer structure by traditional means.

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2008 International Conference on Electronic Packaging Technology & High Density Packaging

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