L. Larcher, A. Padovani, O. Pirrotta, L. Vandelli, G. Bersuker
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Microscopic understanding and modeling of HfO2 RRAM device physics
In this paper we investigate the physical mechanisms governing operations in HfOx RRAM devices. Forming set and reset processes are studied using a model including power dissipation associated with the charge transport, and the corresponding temperature increase, which assists ion diffusion.
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