晶圆片背面检测应用于良率保护和提高

L. Cheema, L. Olmer, O. Patterson, S. López, M. Burns
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引用次数: 3

摘要

半导体制造商采用各种技术和工具来检测和识别限制产品和工艺产量的物理缺陷。这些技术大多集中在测量制造器件的半导体晶圆的正面。对晶圆片背面缺陷的关注很少。两个可能的原因是缺乏合适的设备和方法,以及缺乏对背面缺陷如何影响生产线的认识。本文介绍了四个案例,描述了背面缺陷如何影响良率、废品率和生产成本。最近开发了一种便于后方检查的新技术。关键改进包括无损扫描晶圆背面的能力和提高坐标精度,从而允许加法器计算和扫描电镜检查。本文描述了如何在这些案例研究中应用这项新技术,从而提高了产量,减少了废料和生产成本。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Wafer back side inspection applications for yield protection and enhancement
Semiconductor manufacturers employ various techniques and tools to detect and identify the physical defects that limit product and process yields. Most of these techniques focus on measuring the front side of the semiconductor wafer where the devices are manufactured. Attention to defectivity on the wafer backside has been minimal. Two possible reasons are the lack of suitable equipment and methods, and a lack of awareness of how backside defectivity can affect a manufacturing line. This paper presents four case studies which describe how back side defectivity can affect yield, scrap and production costs. New technology, which facilitates backside inspection, has recently been developed. Key improvements include the ability to non-destructively scan wafer backsides and improved coordinate accuracy, which allows adder calculations and SEM review. This paper describes how this new technology was applied in these case studies, thereby improving yield and reducing scrap and production costs.
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