采用联发科扇形创新封装(FOMIP)技术的细间距互连和高度集成封装

I. Hsu, Chi-Yuan Chen, Stanley Lin, Ta-Jen Yu, M. Hsieh, K. Kang, S. Yoon
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引用次数: 1

摘要

连接到虚拟云接入点的移动数据访问设备市场正在爆炸式增长,这既推动了功能融合的增加,也推动了封装的复杂性和复杂性的增加。这推动了前所未有的需求,以增加各种先进封装,如小芯片和TSV(通过硅孔)中间层封装解决方案。预计业界将看到更多令人兴奋的先进晶圆级封装互连技术,如TSV, 2.5D interposers, TSV-less(最后一个芯片),eWLB(嵌入式晶圆级球栅阵列)/FOWLP(扇出晶圆级封装),以满足这些需求。由于先进Si节点的移动通信应用总是要求减小芯片尺寸、提高效率和降低功耗,因此采用了更精细的线宽/空间(LW/LS)和模垫间距设计。然而,当更精细的LW/LS设计用于先进的Si节点电子器件时,不仅会增加成本,而且必须考虑倒装芯片封装中的基板制造能力。LW/LS为5/5μm及以下的基板技术目前在制造中仍然是一个严峻的挑战。因此,为了提供具有成本效益、细间距互连、高集成度和高性能的封装解决方案,本文引入了FOMIP (Fan-out Mediatek Innovation Package)技术。FOMIP技术采用2.5D eWLB和倒装封装技术,采用60μm晶片间距、5/5μm LW/LS和1层再分布层(RDL)设计,通过铜柱碰撞工艺将互连间距扩展至最小80μm。装配挑战和工艺发展,包括如何优化设备处理和成型晶圆翘曲表征。收集了带铜柱凸起的模晶圆的翘曲量,分析了eWLB封装模拟前的不同工艺。采用模制eWLB封装作为倒装芯片,采用高性价比的质量回流(MR)芯片贴装工艺,贴装在LW/LS为10/10μm的2层嵌入式示线基板(ETS)上。为了检验结构的质量和成品率,进行了封装级长期可靠性试验。基于这些结果,我们相信,当在模级设计中使用更精细的LW/LS和间距时,例如40μm的模垫间距与2/2μm的LW/LS和1层RDL设计及以下时,这种经过验证的FOMIP技术可以成为一种坚固、低轮廓且具有成本效益的封装解决方案。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Fine-Pitch Interconnection and Highly Integrated Assembly Packaging with FOMIP (Fan-out Mediatek Innovation Package) Technology
The market for mobile data access devices connected to a virtual cloud access point is exploding and driving both increased functional convergence as well as increased packaging complexity and sophistication. This is driving an unprecedented demand to increase the variety of advanced packages, such as chiplets and TSV (Through Silicon Via) interposer packaging solutions. It is expected that the industry will see more exciting interconnect technologies of advanced wafer level packaging such as TSV, 2.5D interposers, TSV-less (die last), eWLB (embedded Wafer Level Ball Grid Array)/FOWLP (Fan Out Wafer Level Package) to meet these needs. Because demands of die size reduction, efficiency enhancement and lower power consumption are always required in mobile communication applications with advanced Si node, much finer line width/space (LW/LS) and die pad pitch design is utilized. However, when the finer LW/LS design is used in the advanced Si node electronic devices, not only will there be an increased cost, but also the substrate manufacturing capability in a flip chip package must be considered. The substrate technology with finer LW/LS of 5/5μm and below currently is still a tough challenge in manufacturing. Therefore, in order to deliver a cost-efficient, fine pitch interconnection, highly integrated and performance packaging solution, the FOMIP (Fan-out Mediatek Innovation Package) technology is introduced in this paper. The FOMIP technology adopts 2.5D eWLB and flip chip package technologies with the design of 60μm die pad pitch, 5/5μm LW/LS and 1 layer redistribution layer (RDL) to extend the interconnection pitch as minimum 80μm by Cu pillar bumping process. The assembly challenges and process development including how to optimize the equipment handling and the warpage characterization of molded wafer is present. The warpage of molded wafer with Cu pillar bumps is collected to analyze different processes before eWLB package singulation. The molded eWLB package is adopted as a flip chip die to attach on a 2-layers embedded trace substrate (ETS) with LW/LS of 10/10μm by using cost-effective mass reflow (MR) chip attach process. To examine the quality and yield of the structure, package level long-term reliability tests are performed. Based on these results, it is believed that this examined FOMIP technology can be a robust, low profile and cost-effective package solution when much finer LW/LS and pitches in the die level design are utilized, such as 40μm die pad pitch with 2/2μm LW/LS and 1 layer RDL design and below.
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