具有双STI的UTBB FDSOI晶体管,用于20nm及以下节点的多vt策略

L. Grenouillet, M. Vinet, J. Gimbert, B. Giraud, J. Noel, Q. Liu, P. Khare, M. Jaud, Y. Le Tiec, R. Wacquez, T. Levin, P. Rivallin, S. Holmes, S. Liu, K. Chen, O. Rozeau, P. Scheiblin, E. Mclellan, M. Malley, J. Guilford, A. Upham, R. Johnson, M. Hargrove, T. Hook, S. Schmitz, S. Mehta, J. Kuss, N. Loubet, S. Teehan, M. Terrizzi, S. Ponoth, K. Cheng, T. Nagumo, A. Khakifirooz, F. Monsieur, P. Kulkarni, R. Conte, J. Demarest, O. Faynot, W. Kleemeier, S. Luning, B. Doris
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引用次数: 61

摘要

我们为超薄体和BOX (UTBB) FDSOI架构引入了一种创新的双深度浅沟槽隔离(dual STI)方案。由于在双STI配置中,井通过最深的沟槽相互隔离,因此该架构可以充分利用反向偏置,同时保持与标准批量设计和传统SOI基板的兼容。我们在20nm基本规则中证明,我们能够将Vt调整超过400mV,晶体管性能可以提高高达30%,并且通过允许在后门上施加超过VDD/2,可以控制Ioff超过30年。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
UTBB FDSOI transistors with dual STI for a multi-Vt strategy at 20nm node and below
We introduce an innovative dual-depth shallow trench isolation (dual STI) scheme for Ultra Thin Body and BOX (UTBB) FDSOI architecture. Since in the dual STI configuration wells are isolated from one another by the deepest trenches, this architecture enables a full use of the back bias while staying compatible with both standard bulk design and conventional SOI substrates. We demonstrate in 20nm ground rules that we are able to tune Vt by more than 400mV, that transistor performance can be boosted by up to 30% and that Ioff can be controlled over 3 decades by allowing more than VDD/2 to be applied on the back gate.
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