辅助电路设计对22nm及以后SRAM的影响

2012 International Electron Devices Meeting Pub Date : 2012-12-01 DOI:10.1109/IEDM.2012.6479099

E. Karl, Z. Guo, Y. Ng, J. Keane, U. Bhattacharya, K. Zhang

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引用次数: 31

摘要

在先进技术节点中不断增加的工艺变化需要持续的工艺和电路创新，以满足SRAM存储器的产量、性能和裕度要求。内存辅助电路正在成为共同开发关键规模内存解决方案的重要工具，并且可以对流程优化、功耗、最小工作电压和内存性能产生重大影响。

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The impact of assist-circuit design for 22nm SRAM and beyond

Increasing process variation in advanced technology nodes requires sustained process and circuit innovation to meet yield, performance and margin requirements for SRAM memories. Memory assist circuits are becoming an important tool in co-developing critical scaled memory solutions and can have significant impact on process optimization, as well as power consumption, minimum operating voltage and performance of memories.

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2012 International Electron Devices Meeting

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