高频功率LDMOS技术在基站中的应用现状、潜力和基准测试

G. Ma, Qiang Chen, O. Tornblad, Tao Wei, C. Ahrens, R. Gerlach
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引用次数: 18

摘要

基于G. Ma等人(1996)和H. Brech等人(2003)的LDMOS技术,由于性能、成本、可靠性和功率能力优势,在过去10年里,在450MHz至2.7GHz频率范围内的无线基站应用中占据主导地位。本文回顾了英飞凌领先的LDMOS发展,并讨论了LDMOS技术的未来潜力和局限性;还介绍了替代技术的基准测试
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High frequency power LDMOS technologies for base station applications status, potential, and benchmarking
LDMOS technologies based in G. Ma et al. (1996) and H. Brech et al. (2003) have been in dominate position in wireless base station applications for frequencies ranging from 450MHz to 2.7GHz for the last 10 years due to performance, cost, reliability, and power capability advantages. This paper reviews the leading edge LDMOS development at Infineon and discusses future potential and limitation for LDMOS technologies in general; benchmarking with alternative technologies is also presented
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