先进接触方案中肖特基势垒高度的调制

2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM) Pub Date : 2015-05-18 DOI:10.1109/IITC-MAM.2015.7325608

Mariela Menghini, P. Homm, Chen-Yi Su, J. Kittl, R. Tomita, G. Hegde, Joon-Gon Lee, S. Hyun, C. Bowen, M. Rodder, V. Afanas’ev, J. Locquet

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引用次数: 1

摘要

讨论了Si、SiGe和Ge沟道mosfet器件的触点方案，这与基于低肖特基势垒高度(SBH)的SiGe合金用于pMOS和Si触点用于nMOS的方法一致，这使得降低SBH到nSi至关重要。研究了减少SBH的方法及其潜在机制。精确的低温CV测量用于提取SBH。我们发现硫族化合物偏析可以通过偶极子效应有效地降低SBH，而MIS接触具有部分解钉效应。SBH=0.00±0.01 eV。

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Modulation of the Schottky barrier height for advanced contact schemes

Contact schemes for scaled Si, SiGe and Ge channel MOSFETs devices are discussed, consistent with an approach based on SiGe alloys with low Schottky Barrier Height (SBH) for pMOS and Si contacts for nMOS, making reduction of the SBH to nSi critical. Methods for SBH reduction, and their underlying mechanisms, are studied. Accurate cryogenic CV measurements were used to extract SBH. We show that chalcogenide segregation can be effective in lowering the SBH by a dipole effect, while MIS contacts have a partial un-pinning effect. SBH=0.00±0.01 eV was achieved.

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2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)

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