Seong-Geon Park, M. Yang, H. Ju, D. Seong, Jung Moo Lee, Eunmi Kim, Seungjae Jung, Lijie Zhang, Yoocheol Shin, I. Baek, Jungdal Choi, Ho-Kyu Kang, C. Chung
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A non-linear ReRAM cell with sub-1μA ultralow operating current for high density vertical resistive memory (VRRAM)
A non-linear RRAM cell with sub-1μA ultralow operating current has been successfully fabricated for high density vertical ReRAM (VRRAM) applications. A uniform and reproducible low power resistive switching was achieved by engineering transition metal oxides and imposing thin insulating layer as a tunnel barrier. The non-linear I-V characteristics ensure the possible incorporation of RRAM cell into high density cross-type array structure including VRRAM. By varying the current compliance, a multi level switching behavior was obtained. Moreover, excellent endurance of more than 107 cycles without read disturbance for up to 104 seconds was demonstrated.
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