超薄栅极介质薄膜的在线电学特性

半导体技术 Pub Date : 2002-08-07 DOI:10.1109/ASMC.2002.1001563

F. Cubaynes, S. Passefort, K. Eason, Xiafang Zhang, L. Date, D. Pique, T. Conard, A. Rothschild, M. Schaekers

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引用次数: 1

摘要

本文报道了超薄栅极电介质的在线测量。利用在线光学和非接触式电测量技术研究了各种等离子体氮化氧化物的EOT, EOT小于1.5 nm。与物理分析和“经典”电容电压测量的良好相关性表明，在线测量技术适合首次对超薄介质薄膜进行定性评价。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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In-line electrical characterization of ultrathin gate dielectric films

In this paper, in-line measurements of ultrathin gate dielectrics are reported. Various plasma nitrided oxides down to 1.5 nm EOT have been studied using in-line optical and non-contact electrical measurement techniques. The good correlation obtained with physical analysis and "classic" capacitance-voltage measurements shows the suitability of in-line measurement techniques for a first qualitative evaluation of ultrathin dielectric films.

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半导体技术

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