用于后nand存储应用的多层交叉点二元氧化物电阻存储器(OxRRAM)

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. Pub Date : 2005-12-05 DOI:10.1109/IEDM.2005.1609462

I. Baek, D. Kim, M. Lee, H. Kim, E. Yim, M.S. Lee, J. Lee, S. Ahn, S. Seo, J. Lee, J.C. Park, Y. Cha, S.O. Park, H. Kim, I. Yoo, U. Chung, J. Moon, B. Ryu

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引用次数: 221

摘要

对多层交叉点结构二元氧化物电阻存储器(OxRRAM)在下一代非易失性随机存取高密度数据存储中的可行性进行了测试。新型插头触点型底电极(plug- be)可将有源记忆电池直径减小至50nm，且工作电流更小，开关分布更好。有了2个额外的掩模，一层plug-BE包含的交叉点存储阵列可以添加到另一层的顶部。未观察到层间干扰的信号。此外，为了抑制交叉点存储阵列的层内干扰，还制作了基于二元氧化物的原型二极管

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Multi-layer cross-point binary oxide resistive memory (OxRRAM) for post-NAND storage application

Feasibility of the multi-layer cross-point structured binary oxide resistive memory (OxRRAM) has been tested for next generation non-volatile random access high density data storage application. Novel plug contact type bottom electrode (plug-BE) could reduce active memory cell diameter down to 50nm with smaller operation current and improved switching distributions. With 2 additional masks, one layer of plug-BE included cross-point memory array could be added on top of another one. No signal of inter-layer interference has been observed. Also, prototype binary oxide based diodes have been fabricated for the purpose of suppressing intra-layer interference of cross-point memory array

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IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.

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