J. de Marneffe, L. Zhang, V. Rutigliani, G. Noya, Y. Cao, A. Lesniewska, O. Pedreira, K. Croes, C. Gillot, Z. Tokei, J. Boemmels, M. Baklanov
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Optimized pore stuffing for enhanced compatibility with interconnect integration flow
Plasma processing of porous órgano-silicate Iowie dielectrics, following the damascene approach. remains one the biggest challenge for IC manufacturing. During low-k plasma etching. reactive radicals (O*, F* amongst others) and VUV penetrate easily into the porous low-k structure, reacting with Si-CH3 terminating bonds, ultimately turning the etched low-k hydrophilic and raising the integrated k-value beyond acceptable limits.
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