利用RuO4和H2/H2-等离子体低温热等离子体增强钌原子层沉积

2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM) Pub Date : 2015-05-18 DOI:10.1109/IITC-MAM.2015.7325607

Matthias M. Minjauw, J. Dendooven, Boris Capon, C. Detavernier, M. Schaekers

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引用次数: 1

摘要

报道了热(RuO4/ h2 -气体)和等离子体增强(RuO4/ h2 -等离子体)原子层沉积(ALD)工艺沉积Ru的方法。介绍了两种工艺的ALD特性和薄膜性能。根据薄膜性能作为样品温度的函数，将热过程与等离子过程进行了比较。最后，对可能的ALD反应机制进行了讨论。

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Low temperature thermal and plasma enhanced atomic layer deposition of ruthenium using RuO4 and H2/H2-plasma

A thermal (RuO4/H2-gas) and a plasma enhanced (RuO4/H2-plasma) atomic layer deposition (ALD) process for deposition of Ru are reported. The ALD characteristics and film properties of both processes are presented. The thermal process is compared to the plasma process in terms of film properties as a function of sample temperature. Finally, a discussion about the probable ALD reaction mechanisms is given.

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2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)

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