M. Miyamura, M. Tada, T. Sakamoto, N. Banno, K. Okamoto, N. Iguchi, H. Hada
{"title":"利用互补原子开关在非易失性可编程单元上的逻辑映射首次演示","authors":"M. Miyamura, M. Tada, T. Sakamoto, N. Banno, K. Okamoto, N. Iguchi, H. Hada","doi":"10.1109/IEDM.2012.6479020","DOIUrl":null,"url":null,"abstract":"Reconfigurable nonvolatile programmable logic using complementary atom switch (CAS) is successfully demonstrated on a 65-nm-node test chip. Various logics are realized by synthesizing RTL codes and mapping the configurations into CAS-based programmable cell array. Each cell includes the two 4-input LUTs, 19×16 crossbar switch, and 368-b CAS. The CAS integrated over CMOS reduces the cell area by 78% compared to a conventional SRAM-based design.","PeriodicalId":6376,"journal":{"name":"2012 International Electron Devices Meeting","volume":"107 1","pages":"10.6.1-10.6.4"},"PeriodicalIF":0.0000,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"35","resultStr":"{\"title\":\"First demonstration of logic mapping on nonvolatile programmable cell using complementary atom switch\",\"authors\":\"M. Miyamura, M. Tada, T. Sakamoto, N. Banno, K. Okamoto, N. Iguchi, H. Hada\",\"doi\":\"10.1109/IEDM.2012.6479020\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Reconfigurable nonvolatile programmable logic using complementary atom switch (CAS) is successfully demonstrated on a 65-nm-node test chip. Various logics are realized by synthesizing RTL codes and mapping the configurations into CAS-based programmable cell array. Each cell includes the two 4-input LUTs, 19×16 crossbar switch, and 368-b CAS. The CAS integrated over CMOS reduces the cell area by 78% compared to a conventional SRAM-based design.\",\"PeriodicalId\":6376,\"journal\":{\"name\":\"2012 International Electron Devices Meeting\",\"volume\":\"107 1\",\"pages\":\"10.6.1-10.6.4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"35\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2012.6479020\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2012.6479020","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
First demonstration of logic mapping on nonvolatile programmable cell using complementary atom switch
Reconfigurable nonvolatile programmable logic using complementary atom switch (CAS) is successfully demonstrated on a 65-nm-node test chip. Various logics are realized by synthesizing RTL codes and mapping the configurations into CAS-based programmable cell array. Each cell includes the two 4-input LUTs, 19×16 crossbar switch, and 368-b CAS. The CAS integrated over CMOS reduces the cell area by 78% compared to a conventional SRAM-based design.
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