Yb掺杂对Ni FUSI工作函数的调制:从中隙到n型带边

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. Pub Date : 2005-12-05 DOI:10.1109/IEDM.2005.1609429

H. Yu, J.D. Chen, M. Li, S.J. Lee, D. Kwong, M. V. van Dal, J. Kittl, A. Lauwers, E. Augendre, S. Kubicek, C. Zhao, H. Bender, B. Brijs, L. Geenen, A. Benedetti, P. Absil, M. Jurczak, S. Biesemans

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引用次数: 5

摘要

本工作的关键结果是实验证明，在Ni FUSI中添加Yb可以在薄硅上将工作函数(WF)从中隙(NiSi ~4.72 eV)调整到n型带边(~4.22 eV)，保持相同的EOT。此外，当WF被掺杂剂如as或Sb调制时，我们没有观察到其他报告中发现的任何界面粘附问题。我们也表明可靠性与Ni FUSI相似。这是一种很有前途的nFET栅极形成技术，并使45纳米及以上的双栅极CMOS技术以可制造的方式实现

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Modulation of the Ni FUSI workfunction by Yb doping: from midgap to n-type band-edge

The key result in this work is the experimental demonstration that adding Yb to Ni FUSI allows for tuning the work function (WF) from midgap (NiSi ~4.72 eV) to n-type band-edge (~4.22 eV) on thin SiON, maintaining same EOT. In addition, we did not observe any interface adhesion issues found in other reports when WF is modulated by dopants such as As or Sb. We also show that reliability is similar to Ni FUSI. This is a promising technique for nFET gate electrode formation and enables dual gate CMOS technologies for 45 nm and beyond in a manufacturable way

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IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.

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