毫米波频率的8瓦GaN hemt

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. Pub Date : 2005-12-05 DOI:10.1109/IEDM.2005.1609414

Y. Wu, M. Moore, A. Saxler, T. Wisleder, U. Mishra, P. Parikh

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引用次数: 34

摘要

为了在毫米波频率下具有优异的大信号性能，开发了场镀短栅长的GaN hemt。100毫米宽的器件在40 GHz时实现了8.6 W/mm的功率密度。放大后，预先匹配的1.05 mm宽器件在30 GHz和35 GHz下分别产生5.4和5.2 W输出功率，相关PAE分别为36%和31%。一个1.5 mm宽的器件在30 GHz下产生8 W, PAE为31%，代表了毫米波频率下GaN hemt的最新技术

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8-watt GaN HEMTs at millimeter-wave frequencies

Field-plated short-gate-length GaN HEMTs were developed for superior large-signal performance at millimeter-wave frequencies. 100-mum-wide devices achieved 8.6 W/mm power density at 40 GHz. Scaled-up, pre-matched 1.05-mm-wide devices generated 5.4 & 5.2 W output power with associated PAE of 36 & 31 % at 30 and 35 GHz, respectively. A 1.5-mm-wide device produced 8 W at 30 GHz with 31 % PAE, representing the state-of-the-art for GaN HEMTs at millimeter-wave frequencies

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IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.

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