C4NP用于无铅焊料晶圆碰撞和3D细间距应用

D. Shih, B. Dang, P. Gruber, M. Lu, S. Kang, S. Buchwalter, J. Knickerbocker, E. Perfecto, J. Garant, S. Knickerbocker, K. Semkow, B. Sundlof, J. Busby, R. Weisman, K. Ruhmer, E. Hughlett
{"title":"C4NP用于无铅焊料晶圆碰撞和3D细间距应用","authors":"D. Shih, B. Dang, P. Gruber, M. Lu, S. Kang, S. Buchwalter, J. Knickerbocker, E. Perfecto, J. Garant, S. Knickerbocker, K. Semkow, B. Sundlof, J. Busby, R. Weisman, K. Ruhmer, E. Hughlett","doi":"10.1109/ICEPT.2008.4607052","DOIUrl":null,"url":null,"abstract":"Controlled collapse chip connection - new process (C4NP) technology is a novel solder bumping technology developed by IBM to address the limitations of existing bumping technologies. Through continuous improvements in processes, materials and defect control, C4NP technology has been successfully implemented at IBM in the manufacturing of all 300 mm Pb-free solder bumped wafers. Both 200 mum and 150 mum pitch products have been qualified and are currently ramping up volume production. Extendibility of C4NP to 50 mum ultra-fine pitch microbump application has been successfully demonstrated with the existing C4NP manufacturing tools. Targeted applications for microbumps are three-dimensional (3D) chip integration and the conversion of memory wafers from wirebonding (WB) to C4 bumping. The metrology data on solder volume, bump height, defect and yield have been characterized by RVSI inspection. This paper reviews the C4NP processes from mold manufacturing, solder fill and solder transfer onto 300 mm wafers, along with defect and yield analysis. Reliability challenges as well as solutions in the development and qualification of flip chip Pb-free solder joint are also reviewed. In addition to a suitable under bump metallurgy (UBM), a robust lead-free solder alloy with precisely controlled composition and special alloy doping is needed to enhance performance and reliability.","PeriodicalId":6324,"journal":{"name":"2008 International Conference on Electronic Packaging Technology & High Density Packaging","volume":"39 1","pages":"1-7"},"PeriodicalIF":0.0000,"publicationDate":"2008-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"C4NP for Pb-free solder wafer bumping and 3D fine-pitch applications\",\"authors\":\"D. Shih, B. Dang, P. Gruber, M. Lu, S. Kang, S. Buchwalter, J. Knickerbocker, E. Perfecto, J. Garant, S. Knickerbocker, K. Semkow, B. Sundlof, J. Busby, R. Weisman, K. Ruhmer, E. Hughlett\",\"doi\":\"10.1109/ICEPT.2008.4607052\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Controlled collapse chip connection - new process (C4NP) technology is a novel solder bumping technology developed by IBM to address the limitations of existing bumping technologies. Through continuous improvements in processes, materials and defect control, C4NP technology has been successfully implemented at IBM in the manufacturing of all 300 mm Pb-free solder bumped wafers. Both 200 mum and 150 mum pitch products have been qualified and are currently ramping up volume production. Extendibility of C4NP to 50 mum ultra-fine pitch microbump application has been successfully demonstrated with the existing C4NP manufacturing tools. Targeted applications for microbumps are three-dimensional (3D) chip integration and the conversion of memory wafers from wirebonding (WB) to C4 bumping. The metrology data on solder volume, bump height, defect and yield have been characterized by RVSI inspection. This paper reviews the C4NP processes from mold manufacturing, solder fill and solder transfer onto 300 mm wafers, along with defect and yield analysis. Reliability challenges as well as solutions in the development and qualification of flip chip Pb-free solder joint are also reviewed. In addition to a suitable under bump metallurgy (UBM), a robust lead-free solder alloy with precisely controlled composition and special alloy doping is needed to enhance performance and reliability.\",\"PeriodicalId\":6324,\"journal\":{\"name\":\"2008 International Conference on Electronic Packaging Technology & High Density Packaging\",\"volume\":\"39 1\",\"pages\":\"1-7\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-07-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 International Conference on Electronic Packaging Technology & High Density Packaging\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICEPT.2008.4607052\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 International Conference on Electronic Packaging Technology & High Density Packaging","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEPT.2008.4607052","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6

摘要

控制折叠芯片连接-新工艺(C4NP)技术是IBM为解决现有碰撞技术的局限性而开发的一种新型焊料碰撞技术。通过对工艺、材料和缺陷控制的不断改进,C4NP技术已成功地在IBM制造了所有300毫米无铅凸点晶圆。200米和150米的产品都已通过认证,目前正在批量生产。利用现有的C4NP制造工具成功地演示了C4NP到50微米超细间距微凸点应用的可扩展性。微凸点的目标应用是三维(3D)芯片集成和从线键合(WB)到C4凸点的存储晶圆转换。对焊料体积、凸点高度、缺陷和成品率等计量数据进行了RVSI检测表征。本文回顾了C4NP工艺从模具制造,焊料填充和焊料转移到300mm晶圆上,以及缺陷和良率分析。回顾了倒装无铅焊点在开发和鉴定过程中面临的可靠性挑战以及解决方案。为了提高焊料的性能和可靠性,除了需要一种适用于碰撞冶金(UBM)的焊料合金外,还需要一种具有精确控制成分和特殊合金掺杂的坚固无铅焊料合金。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
C4NP for Pb-free solder wafer bumping and 3D fine-pitch applications
Controlled collapse chip connection - new process (C4NP) technology is a novel solder bumping technology developed by IBM to address the limitations of existing bumping technologies. Through continuous improvements in processes, materials and defect control, C4NP technology has been successfully implemented at IBM in the manufacturing of all 300 mm Pb-free solder bumped wafers. Both 200 mum and 150 mum pitch products have been qualified and are currently ramping up volume production. Extendibility of C4NP to 50 mum ultra-fine pitch microbump application has been successfully demonstrated with the existing C4NP manufacturing tools. Targeted applications for microbumps are three-dimensional (3D) chip integration and the conversion of memory wafers from wirebonding (WB) to C4 bumping. The metrology data on solder volume, bump height, defect and yield have been characterized by RVSI inspection. This paper reviews the C4NP processes from mold manufacturing, solder fill and solder transfer onto 300 mm wafers, along with defect and yield analysis. Reliability challenges as well as solutions in the development and qualification of flip chip Pb-free solder joint are also reviewed. In addition to a suitable under bump metallurgy (UBM), a robust lead-free solder alloy with precisely controlled composition and special alloy doping is needed to enhance performance and reliability.
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