Y. H. Chen, C. A. Yang, C. Kuo, M. F. Chen, C. Tung, W. Chiou, Douglas C. H. Yu
{"title":"亚微米键距的超高密度SoIC","authors":"Y. H. Chen, C. A. Yang, C. Kuo, M. F. Chen, C. Tung, W. Chiou, Douglas C. H. Yu","doi":"10.1109/ECTC32862.2020.00096","DOIUrl":null,"url":null,"abstract":"An ultrahigh density 3D technology, SoIC_UHD, with sub-micron pitch inter-chip vertical interconnect enabling a density ≥ 1.2 million bonds/mm2 is reported for the first time. Proven yield and reliability of SoIC_UHD are demonstrated with a foundry front-end wafer level 3D heterogeneous system integration (WLSI) platform. SoC deep partitioning into mini chiplets with SoIC_UHD can extend Moore's Law for longer term than that achieved by conventional 3DIC stacking with micro-bumps. Microsystem scaling, which is complementary to transistor scaling, can continue to improve transistor density, system PPA, and cost competitiveness.","PeriodicalId":6722,"journal":{"name":"2020 IEEE 70th Electronic Components and Technology Conference (ECTC)","volume":"143 1","pages":"576-581"},"PeriodicalIF":0.0000,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"20","resultStr":"{\"title\":\"Ultra High Density SoIC with Sub-micron Bond Pitch\",\"authors\":\"Y. H. Chen, C. A. Yang, C. Kuo, M. F. Chen, C. Tung, W. Chiou, Douglas C. H. Yu\",\"doi\":\"10.1109/ECTC32862.2020.00096\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An ultrahigh density 3D technology, SoIC_UHD, with sub-micron pitch inter-chip vertical interconnect enabling a density ≥ 1.2 million bonds/mm2 is reported for the first time. Proven yield and reliability of SoIC_UHD are demonstrated with a foundry front-end wafer level 3D heterogeneous system integration (WLSI) platform. SoC deep partitioning into mini chiplets with SoIC_UHD can extend Moore's Law for longer term than that achieved by conventional 3DIC stacking with micro-bumps. Microsystem scaling, which is complementary to transistor scaling, can continue to improve transistor density, system PPA, and cost competitiveness.\",\"PeriodicalId\":6722,\"journal\":{\"name\":\"2020 IEEE 70th Electronic Components and Technology Conference (ECTC)\",\"volume\":\"143 1\",\"pages\":\"576-581\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"20\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE 70th Electronic Components and Technology Conference (ECTC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ECTC32862.2020.00096\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE 70th Electronic Components and Technology Conference (ECTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECTC32862.2020.00096","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Ultra High Density SoIC with Sub-micron Bond Pitch
An ultrahigh density 3D technology, SoIC_UHD, with sub-micron pitch inter-chip vertical interconnect enabling a density ≥ 1.2 million bonds/mm2 is reported for the first time. Proven yield and reliability of SoIC_UHD are demonstrated with a foundry front-end wafer level 3D heterogeneous system integration (WLSI) platform. SoC deep partitioning into mini chiplets with SoIC_UHD can extend Moore's Law for longer term than that achieved by conventional 3DIC stacking with micro-bumps. Microsystem scaling, which is complementary to transistor scaling, can continue to improve transistor density, system PPA, and cost competitiveness.