亚微米键距的超高密度SoIC

Y. H. Chen, C. A. Yang, C. Kuo, M. F. Chen, C. Tung, W. Chiou, Douglas C. H. Yu
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引用次数: 20

摘要

超高密度3D技术SoIC_UHD首次被报道,该技术具有亚微米间距的芯片间垂直互连,可实现密度≥120万键/mm2。通过代工前端晶圆级3D异构系统集成(WLSI)平台,验证了SoIC_UHD的良率和可靠性。与传统的3DIC微凸点堆叠相比,SoC深度划分成SoIC_UHD的小芯片可以延长摩尔定律的使用时间。微系统缩放是对晶体管缩放的补充,可以继续提高晶体管密度、系统PPA和成本竞争力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Ultra High Density SoIC with Sub-micron Bond Pitch
An ultrahigh density 3D technology, SoIC_UHD, with sub-micron pitch inter-chip vertical interconnect enabling a density ≥ 1.2 million bonds/mm2 is reported for the first time. Proven yield and reliability of SoIC_UHD are demonstrated with a foundry front-end wafer level 3D heterogeneous system integration (WLSI) platform. SoC deep partitioning into mini chiplets with SoIC_UHD can extend Moore's Law for longer term than that achieved by conventional 3DIC stacking with micro-bumps. Microsystem scaling, which is complementary to transistor scaling, can continue to improve transistor density, system PPA, and cost competitiveness.
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