p沟道隧道场效应晶体管(ttfet)的直接带对带隧穿:锗锡(GeSn)技术实现

2012 International Electron Devices Meeting Pub Date : 2012-12-01 DOI:10.1109/IEDM.2012.6479053

Yue Yang, S. Su, P. Guo, Wei Wang, X. Gong, Lanxiang Wang, Kain Lu Low, Guangze Zhang, C. Xue, B. Cheng, G. Han, Y. Yeo

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引用次数: 61

摘要

在这项工作中，我们报道了GeSn pTFET的首次演示。获得了良好的器件特性。这可能归因于直接的BTBT, GeSn通道中高空穴迁移率以及突然和重掺杂N+源的形成。离子性能可以通过进一步的器件优化来提高。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Towards direct band-to-band tunneling in P-channel tunneling field effect transistor (TFET): Technology enablement by Germanium-tin (GeSn)

In this work, we report the first demonstration of GeSn pTFET. Good device characteristics were obtained. This may be attributed to direct BTBT, high hole mobility in the GeSn channel, and the formation of abruptly and heavily doped N+ source. The ION performance can be improved with further device optimization.

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2012 International Electron Devices Meeting

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