场极板辅助复用电源器件的退化研究

2012 International Electron Devices Meeting Pub Date : 2012-12-10 DOI:10.1109/IEDM.2012.6479036

B. Boksteen, S. Dhar, A. Ferrara, A. Heringa, R. Hueting, G. Koops, C. Salm, J. Schmitz

{"title":"场极板辅助复用电源器件的退化研究","authors":"B. Boksteen, S. Dhar, A. Ferrara, A. Heringa, R. Hueting, G. Koops, C. Salm, J. Schmitz","doi":"10.1109/IEDM.2012.6479036","DOIUrl":null,"url":null,"abstract":"Hot-carrier degradation phenomena in field-plate assisted reduced surface field (RESURF) devices caused by high voltage off- and on-state stressing have been investigated. The device I-V characteristics are analyzed and modeled in detail. It is shown that via noninvasive low-voltage leakage characterization the surface generation velocity profiles after (high-voltage) stress can be extracted, enabling I-V degradation predictions across wide temperature ranges.","PeriodicalId":6376,"journal":{"name":"2012 International Electron Devices Meeting","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2012-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"On the degradation of field-plate assisted RESURF power devices\",\"authors\":\"B. Boksteen, S. Dhar, A. Ferrara, A. Heringa, R. Hueting, G. Koops, C. Salm, J. Schmitz\",\"doi\":\"10.1109/IEDM.2012.6479036\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Hot-carrier degradation phenomena in field-plate assisted reduced surface field (RESURF) devices caused by high voltage off- and on-state stressing have been investigated. The device I-V characteristics are analyzed and modeled in detail. It is shown that via noninvasive low-voltage leakage characterization the surface generation velocity profiles after (high-voltage) stress can be extracted, enabling I-V degradation predictions across wide temperature ranges.\",\"PeriodicalId\":6376,\"journal\":{\"name\":\"2012 International Electron Devices Meeting\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2012.6479036\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2012.6479036","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 7

摘要

研究了场板辅助还原面场(RESURF)器件中由高压开关态应力引起的热载子降解现象。对器件的I-V特性进行了详细的分析和建模。研究表明，通过无创低压泄漏表征，可以提取(高压)应力后的表面生成速度曲线，从而可以在很宽的温度范围内预测I-V降解。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

On the degradation of field-plate assisted RESURF power devices

Hot-carrier degradation phenomena in field-plate assisted reduced surface field (RESURF) devices caused by high voltage off- and on-state stressing have been investigated. The device I-V characteristics are analyzed and modeled in detail. It is shown that via noninvasive low-voltage leakage characterization the surface generation velocity profiles after (high-voltage) stress can be extracted, enabling I-V degradation predictions across wide temperature ranges.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2012 International Electron Devices Meeting

自引率

0.00%

发文量