场极板辅助复用电源器件的退化研究

2012 International Electron Devices Meeting Pub Date : 2012-12-10 DOI:10.1109/IEDM.2012.6479036

B. Boksteen, S. Dhar, A. Ferrara, A. Heringa, R. Hueting, G. Koops, C. Salm, J. Schmitz

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引用次数: 7

摘要

研究了场板辅助还原面场(RESURF)器件中由高压开关态应力引起的热载子降解现象。对器件的I-V特性进行了详细的分析和建模。研究表明，通过无创低压泄漏表征，可以提取(高压)应力后的表面生成速度曲线，从而可以在很宽的温度范围内预测I-V降解。

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On the degradation of field-plate assisted RESURF power devices

Hot-carrier degradation phenomena in field-plate assisted reduced surface field (RESURF) devices caused by high voltage off- and on-state stressing have been investigated. The device I-V characteristics are analyzed and modeled in detail. It is shown that via noninvasive low-voltage leakage characterization the surface generation velocity profiles after (high-voltage) stress can be extracted, enabling I-V degradation predictions across wide temperature ranges.

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2012 International Electron Devices Meeting

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