一种新型的nand型MONOS存储器，采用63nm工艺技术用于多千兆闪存eeprom

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. Pub Date : 2005-12-05 DOI:10.1109/IEDM.2005.1609341

Yoocheol Shin, Jungdal Choi, Chang-seok Kang, Changhyun Lee, Ki-Tae Park, Jang‐Sik Lee, Jongsun Sel, V. Kim, Byeongin Choi, J. Sim, Dongchan Kim, Hag-ju Cho, Kinam Kim

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引用次数: 65

摘要

通过优化单元结构和集成方案等突破性技术，成功开发了nand型MONOS器件，提供了良好的存储单元结构和外围电路。在本研究中，使用63nm NAND闪存技术集成的优化TANOS (TaN-Al2O -氮氧化物-硅)电池显示出与浮栅(FG)电池的高性能兼容。新开发的TANOS-NAND闪存技术被证明是替代50纳米以上FG存储器的有希望的候选技术

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A novel NAND-type MONOS memory using 63nm process technology for multi-gigabit flash EEPROMs

A NAND-type MONOS device has been successfully developed by breakthrough technologies including optimized cell structures and integration schemes providing favorable memory cell structures and peripheral circuits. In this study, optimized TANOS (TaN-Al2O 3-nitride-oxide- silicon) cells integrated using 63nm NAND flash technology showed high performance compatible to floating-gate (FG) cell. The newly-developed TANOS-NAND flash technology proved to be a promising candidate to replace FG memory beyond 50nm technology

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IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.

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