高性能短沟道硅纳米线mosfet的室温载流子输运

2012 International Electron Devices Meeting Pub Date : 2012-12-01 DOI:10.1109/IEDM.2012.6479003

A. Majumdar, S. Bangsaruntip, G. Cohen, L. Gignac, M. Guillorn, M. Frank, J. Sleight, D. Antoniadis

{"title":"高性能短沟道硅纳米线mosfet的室温载流子输运","authors":"A. Majumdar, S. Bangsaruntip, G. Cohen, L. Gignac, M. Guillorn, M. Frank, J. Sleight, D. Antoniadis","doi":"10.1109/IEDM.2012.6479003","DOIUrl":null,"url":null,"abstract":"Room-temperature carrier transport in Si nanowire (NW) MOSFETs with gate lengths and diameters down to 25 and 8 nm, respectively, is analyzed. It is shown that in Si NWs, holes exhibit channel injection and thermal velocities, as high as the highest obtained for uniaxially strained planar Si-channel electrons, likely due to combination of strain and confinement.","PeriodicalId":6376,"journal":{"name":"2012 International Electron Devices Meeting","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"23","resultStr":"{\"title\":\"Room-temperature carrier transport in high-performance short-channel Silicon nanowire MOSFETs\",\"authors\":\"A. Majumdar, S. Bangsaruntip, G. Cohen, L. Gignac, M. Guillorn, M. Frank, J. Sleight, D. Antoniadis\",\"doi\":\"10.1109/IEDM.2012.6479003\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Room-temperature carrier transport in Si nanowire (NW) MOSFETs with gate lengths and diameters down to 25 and 8 nm, respectively, is analyzed. It is shown that in Si NWs, holes exhibit channel injection and thermal velocities, as high as the highest obtained for uniaxially strained planar Si-channel electrons, likely due to combination of strain and confinement.\",\"PeriodicalId\":6376,\"journal\":{\"name\":\"2012 International Electron Devices Meeting\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"23\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2012.6479003\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2012.6479003","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 23

摘要

对栅极长度和直径分别为25 nm和8 nm的硅纳米线mosfet的室温载流子输运进行了分析。结果表明，在Si NWs中，空穴表现出通道注入和热速度，与单轴应变平面Si通道电子的最高速度一样高，可能是由于应变和约束的结合。

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Room-temperature carrier transport in high-performance short-channel Silicon nanowire MOSFETs

Room-temperature carrier transport in Si nanowire (NW) MOSFETs with gate lengths and diameters down to 25 and 8 nm, respectively, is analyzed. It is shown that in Si NWs, holes exhibit channel injection and thermal velocities, as high as the highest obtained for uniaxially strained planar Si-channel electrons, likely due to combination of strain and confinement.

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来源期刊

2012 International Electron Devices Meeting

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