高性能短沟道硅纳米线mosfet的室温载流子输运

2012 International Electron Devices Meeting Pub Date : 2012-12-01 DOI:10.1109/IEDM.2012.6479003

A. Majumdar, S. Bangsaruntip, G. Cohen, L. Gignac, M. Guillorn, M. Frank, J. Sleight, D. Antoniadis

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引用次数: 23

摘要

对栅极长度和直径分别为25 nm和8 nm的硅纳米线mosfet的室温载流子输运进行了分析。结果表明，在Si NWs中，空穴表现出通道注入和热速度，与单轴应变平面Si通道电子的最高速度一样高，可能是由于应变和约束的结合。

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Room-temperature carrier transport in high-performance short-channel Silicon nanowire MOSFETs

Room-temperature carrier transport in Si nanowire (NW) MOSFETs with gate lengths and diameters down to 25 and 8 nm, respectively, is analyzed. It is shown that in Si NWs, holes exhibit channel injection and thermal velocities, as high as the highest obtained for uniaxially strained planar Si-channel electrons, likely due to combination of strain and confinement.

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来源期刊

2012 International Electron Devices Meeting

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