BF/ sub2 /sup +/ implant:氟泡诱导ET失效

半导体技术 Pub Date : 2002-08-07 DOI:10.1109/ASMC.2002.1001588

C. Viera, B. Gurcan, K. Crocker, P. Todd, K. Lewis

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引用次数: 0

摘要

氟气泡是已知的BF/ sub2 /sup +/高能植入物的结果。这项工作提出了一种由总氟气泡引起的失效机制，使多晶硅在随后的硅化钴蚀刻过程中受到破坏。一种包括BF/sub 2//sup +/和B11的替代植入物可以减轻F沉淀的影响，而不会消除BF/sub 2//sup +/自非晶化基底的好处。

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BF/sub 2//sup +/ implant: a fluorine bubble induced ET failure

Fluorine bubbles are a known result of BF/sub 2//sup +/ high energy implants. This work presents a failure mechanism induced by gross fluorine bubbles, that allows poly silicon to be damaged during its subsequent cobalt silicide etch. An alternative implant that includes both BF/sub 2//sup +/ and B11 may alleviate the effects of F precipitates without eliminating the benefits of BF/sub 2//sup +/ self-amorphizing the substrate.

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半导体技术

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