基于si - interposer的2.5D集成电路缺陷定位

Sajay Bhuvanendran Nair Gourikutty, Yew Meng Chow, J. Alton, Ratan Bhimrao Umralkar, Haonan Bai, Kok Keng Chua, S. Bhattacharya
{"title":"基于si - interposer的2.5D集成电路缺陷定位","authors":"Sajay Bhuvanendran Nair Gourikutty, Yew Meng Chow, J. Alton, Ratan Bhimrao Umralkar, Haonan Bai, Kok Keng Chua, S. Bhattacharya","doi":"10.1109/ECTC32862.2020.00189","DOIUrl":null,"url":null,"abstract":"Advanced packaging solutions using Through Silicon Interposers (TSI) are an attractive option to create 2.5D ICs. In many applications such as GPU and FPGA, 2.5D ICs can overcome the power, performance, and form-factor limitations of traditional IC packages. Investigating yield-loss and reliability mechanisms of such packages is made particularly challenging by the multitude of possible failure locations such as in TSV, micro-bumps, underfill, solder ball joints and RDL layers. Existing electrical and physical failure analysis tools do not have adequate resolution to accurately localize the failure in 2.5D IC. In this paper, we present a non-destructive methodology to carry out the failure analysis by localizing the defects which are entirely internal to the package and inaccessible from the exterior. In a through silicon interposer based FPGA package, a short failure has been successfully located with an accuracy of less than 10μm without the need for any sample preparation. The testing, fault localization and physical failure analysis of advanced package demonstrated here will provide a cost-effective method for improving manufacturing yield.","PeriodicalId":6722,"journal":{"name":"2020 IEEE 70th Electronic Components and Technology Conference (ECTC)","volume":"128 1","pages":"1180-1185"},"PeriodicalIF":0.0000,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Defect Localization in Through-Si-Interposer Based 2.5D ICs\",\"authors\":\"Sajay Bhuvanendran Nair Gourikutty, Yew Meng Chow, J. Alton, Ratan Bhimrao Umralkar, Haonan Bai, Kok Keng Chua, S. Bhattacharya\",\"doi\":\"10.1109/ECTC32862.2020.00189\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Advanced packaging solutions using Through Silicon Interposers (TSI) are an attractive option to create 2.5D ICs. In many applications such as GPU and FPGA, 2.5D ICs can overcome the power, performance, and form-factor limitations of traditional IC packages. Investigating yield-loss and reliability mechanisms of such packages is made particularly challenging by the multitude of possible failure locations such as in TSV, micro-bumps, underfill, solder ball joints and RDL layers. Existing electrical and physical failure analysis tools do not have adequate resolution to accurately localize the failure in 2.5D IC. In this paper, we present a non-destructive methodology to carry out the failure analysis by localizing the defects which are entirely internal to the package and inaccessible from the exterior. In a through silicon interposer based FPGA package, a short failure has been successfully located with an accuracy of less than 10μm without the need for any sample preparation. The testing, fault localization and physical failure analysis of advanced package demonstrated here will provide a cost-effective method for improving manufacturing yield.\",\"PeriodicalId\":6722,\"journal\":{\"name\":\"2020 IEEE 70th Electronic Components and Technology Conference (ECTC)\",\"volume\":\"128 1\",\"pages\":\"1180-1185\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE 70th Electronic Components and Technology Conference (ECTC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ECTC32862.2020.00189\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE 70th Electronic Components and Technology Conference (ECTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECTC32862.2020.00189","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7

摘要

使用通硅中间体(TSI)的先进封装解决方案是创建2.5D ic的一个有吸引力的选择。在GPU和FPGA等许多应用中,2.5D IC可以克服传统IC封装的功耗、性能和外形限制。由于存在TSV、微凸起、下填充、焊接球接头和RDL层等多种可能的失效位置,研究此类封装的屈服损失和可靠性机制尤其具有挑战性。现有的电气和物理故障分析工具没有足够的分辨率来准确定位2.5D IC中的故障。在本文中,我们提出了一种非破坏性的方法,通过定位完全位于封装内部且无法从外部进入的缺陷来进行故障分析。在基于通硅中间层的FPGA封装中,成功定位了短故障,精度小于10μm,无需任何样品制备。本文所展示的先进封装的测试、故障定位和物理失效分析将为提高制造良率提供一种经济有效的方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Defect Localization in Through-Si-Interposer Based 2.5D ICs
Advanced packaging solutions using Through Silicon Interposers (TSI) are an attractive option to create 2.5D ICs. In many applications such as GPU and FPGA, 2.5D ICs can overcome the power, performance, and form-factor limitations of traditional IC packages. Investigating yield-loss and reliability mechanisms of such packages is made particularly challenging by the multitude of possible failure locations such as in TSV, micro-bumps, underfill, solder ball joints and RDL layers. Existing electrical and physical failure analysis tools do not have adequate resolution to accurately localize the failure in 2.5D IC. In this paper, we present a non-destructive methodology to carry out the failure analysis by localizing the defects which are entirely internal to the package and inaccessible from the exterior. In a through silicon interposer based FPGA package, a short failure has been successfully located with an accuracy of less than 10μm without the need for any sample preparation. The testing, fault localization and physical failure analysis of advanced package demonstrated here will provide a cost-effective method for improving manufacturing yield.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信