H. Sanda, J. Mcvittie, M. Koto, K. Yamagata, T. Yonehara, Y. Nishi
{"title":"用于新型器件层转移的多孔硅cmosfet的制备和表征","authors":"H. Sanda, J. Mcvittie, M. Koto, K. Yamagata, T. Yonehara, Y. Nishi","doi":"10.1109/IEDM.2005.1609442","DOIUrl":null,"url":null,"abstract":"To develop a new device layer transfer technology with porous layer splitting, CMOS FETs were successfully fabricated on epitaxial layers with different thicknesses over porous silicon for the first time. FETs on more than 300nm thick epitaxial films show satisfactory electrical performance. A fabricated active layer was successfully transferred on a flexible plastic substrate for the first time. Transferred devices also show excellent performance. This technology is applicable to flexible single crystal ICs and to thermal cooling of active layers","PeriodicalId":13071,"journal":{"name":"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.","volume":"16 1","pages":"679-682"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Fabrication and characterization of CMOSFETs on porous silicon for novel device layer transfer\",\"authors\":\"H. Sanda, J. Mcvittie, M. Koto, K. Yamagata, T. Yonehara, Y. Nishi\",\"doi\":\"10.1109/IEDM.2005.1609442\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"To develop a new device layer transfer technology with porous layer splitting, CMOS FETs were successfully fabricated on epitaxial layers with different thicknesses over porous silicon for the first time. FETs on more than 300nm thick epitaxial films show satisfactory electrical performance. A fabricated active layer was successfully transferred on a flexible plastic substrate for the first time. Transferred devices also show excellent performance. This technology is applicable to flexible single crystal ICs and to thermal cooling of active layers\",\"PeriodicalId\":13071,\"journal\":{\"name\":\"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.\",\"volume\":\"16 1\",\"pages\":\"679-682\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-12-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2005.1609442\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2005.1609442","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Fabrication and characterization of CMOSFETs on porous silicon for novel device layer transfer
To develop a new device layer transfer technology with porous layer splitting, CMOS FETs were successfully fabricated on epitaxial layers with different thicknesses over porous silicon for the first time. FETs on more than 300nm thick epitaxial films show satisfactory electrical performance. A fabricated active layer was successfully transferred on a flexible plastic substrate for the first time. Transferred devices also show excellent performance. This technology is applicable to flexible single crystal ICs and to thermal cooling of active layers
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