L. Clark, D. Zhao, T. Bakhishev, H. Ahn, E. Boling, M. Duane, K. Fujita, P. Gregory, T. Hoffmann, M. Hori, D. Kanai, D. Kidd, S. Lee, Y. Liu, J. Mitani, J. Nagayama, S. Pradhan, P. Ranade, R. Rogenmoser, L. Scudder, L. Shifren, Y. Torii, M. Wojko, Y. Asada, T. Ema, S. Thompson
{"title":"高度集成的65纳米SoC工艺，增强了数字和模拟电路的功率/性能","authors":"L. Clark, D. Zhao, T. Bakhishev, H. Ahn, E. Boling, M. Duane, K. Fujita, P. Gregory, T. Hoffmann, M. Hori, D. Kanai, D. Kidd, S. Lee, Y. Liu, J. Mitani, J. Nagayama, S. Pradhan, P. Ranade, R. Rogenmoser, L. Scudder, L. Shifren, Y. Torii, M. Wojko, Y. Asada, T. Ema, S. Thompson","doi":"10.1109/IEDM.2012.6479042","DOIUrl":null,"url":null,"abstract":"65nm Deeply Depleted Channel (DDCTM) transistors have been fabricated with a halo-free, un-doped epitaxial channel and enable reduced threshold voltage (VT) variation, lower supply voltage (VCC), enhanced body effect and IEFF. Digital circuits made using this technology show benefits ranging from 47% power reduction to 38% frequency increase. Analog circuits exhibit 4x greater amplifier gain despite lower VDD, and current mirror mismatch (both global and local) shows 40% and 30% reduction for NMOS and PMOS, respectively.","PeriodicalId":6376,"journal":{"name":"2012 International Electron Devices Meeting","volume":"24 1","pages":"14.4.1-14.4.4"},"PeriodicalIF":0.0000,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"21","resultStr":"{\"title\":\"A highly integrated 65-nm SoC process with enhanced power/performance of digital and analog circuits\",\"authors\":\"L. Clark, D. Zhao, T. Bakhishev, H. Ahn, E. Boling, M. Duane, K. Fujita, P. Gregory, T. Hoffmann, M. Hori, D. Kanai, D. Kidd, S. Lee, Y. Liu, J. Mitani, J. Nagayama, S. Pradhan, P. Ranade, R. Rogenmoser, L. Scudder, L. Shifren, Y. Torii, M. Wojko, Y. Asada, T. Ema, S. Thompson\",\"doi\":\"10.1109/IEDM.2012.6479042\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"65nm Deeply Depleted Channel (DDCTM) transistors have been fabricated with a halo-free, un-doped epitaxial channel and enable reduced threshold voltage (VT) variation, lower supply voltage (VCC), enhanced body effect and IEFF. Digital circuits made using this technology show benefits ranging from 47% power reduction to 38% frequency increase. Analog circuits exhibit 4x greater amplifier gain despite lower VDD, and current mirror mismatch (both global and local) shows 40% and 30% reduction for NMOS and PMOS, respectively.\",\"PeriodicalId\":6376,\"journal\":{\"name\":\"2012 International Electron Devices Meeting\",\"volume\":\"24 1\",\"pages\":\"14.4.1-14.4.4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"21\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2012.6479042\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2012.6479042","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A highly integrated 65-nm SoC process with enhanced power/performance of digital and analog circuits
65nm Deeply Depleted Channel (DDCTM) transistors have been fabricated with a halo-free, un-doped epitaxial channel and enable reduced threshold voltage (VT) variation, lower supply voltage (VCC), enhanced body effect and IEFF. Digital circuits made using this technology show benefits ranging from 47% power reduction to 38% frequency increase. Analog circuits exhibit 4x greater amplifier gain despite lower VDD, and current mirror mismatch (both global and local) shows 40% and 30% reduction for NMOS and PMOS, respectively.
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