M. Cassé, S. Barraud, C. Le Royer, M. Koyama, R. Coquand, D. Blachier, F. Andrieu, G. Ghibaudo, O. Faynot, T. Poiroux, G. Reimbold
{"title":"先进CMOS晶体管的压阻特性研究:薄膜SOI, SiGe/SOI，非应变和应变三栅极纳米线","authors":"M. Cassé, S. Barraud, C. Le Royer, M. Koyama, R. Coquand, D. Blachier, F. Andrieu, G. Ghibaudo, O. Faynot, T. Poiroux, G. Reimbold","doi":"10.1109/IEDM.2012.6479119","DOIUrl":null,"url":null,"abstract":"We hereby present an exhaustive extraction and study of piezoresitive (PR) coefficients in advanced CMOS transistors. In particular, we have evidenced the dependence with channel thickness and channel material compositions (SiGe with various Ge contents). Moreover we report for the first time the measurement of PR coefficient on uniaxially strained and unstrained Tri-Gate Nanowires transistors.","PeriodicalId":6376,"journal":{"name":"2012 International Electron Devices Meeting","volume":"52 1","pages":"28.1.1-28.1.4"},"PeriodicalIF":0.0000,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":"{\"title\":\"Study of piezoresistive properties of advanced CMOS transistors: Thin film SOI, SiGe/SOI, unstrained and strained Tri-Gate Nanowires\",\"authors\":\"M. Cassé, S. Barraud, C. Le Royer, M. Koyama, R. Coquand, D. Blachier, F. Andrieu, G. Ghibaudo, O. Faynot, T. Poiroux, G. Reimbold\",\"doi\":\"10.1109/IEDM.2012.6479119\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We hereby present an exhaustive extraction and study of piezoresitive (PR) coefficients in advanced CMOS transistors. In particular, we have evidenced the dependence with channel thickness and channel material compositions (SiGe with various Ge contents). Moreover we report for the first time the measurement of PR coefficient on uniaxially strained and unstrained Tri-Gate Nanowires transistors.\",\"PeriodicalId\":6376,\"journal\":{\"name\":\"2012 International Electron Devices Meeting\",\"volume\":\"52 1\",\"pages\":\"28.1.1-28.1.4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"16\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2012.6479119\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2012.6479119","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Study of piezoresistive properties of advanced CMOS transistors: Thin film SOI, SiGe/SOI, unstrained and strained Tri-Gate Nanowires
We hereby present an exhaustive extraction and study of piezoresitive (PR) coefficients in advanced CMOS transistors. In particular, we have evidenced the dependence with channel thickness and channel material compositions (SiGe with various Ge contents). Moreover we report for the first time the measurement of PR coefficient on uniaxially strained and unstrained Tri-Gate Nanowires transistors.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
