无序纳米粒子阵列中从库仑阻塞到经典临界渗流行为的传导机制转换

IF 5.3 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Abhijeet Prasad, Jay Min Lim, Ravi F Saraf
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引用次数: 0

摘要

由金属纳米颗粒阵列制成的大型开放栅极晶体管为制造传感器等新型电子设备提供了可能性。从300 K到低温的Au颗粒的纳米颗粒项链网络(N3)表现出非欧姆I–Vd行为,I≈(Vd–VT)ζ,其中VT是传导间隙,ζ是常数临界指数。N3中的传导间隙由直径为10nm的Au颗粒的1D链的无序网络制成,表现出室温(RT)门控。尽管RT下的I–Vd行为与库仑阻断相同,但传导是由表现出经典临界行为的场辅助隧穿调制的。在这项研究中,基于VT对门控的不变性、VT对温度的不变性和零偏电导三个结果,发现了≈140 K的急剧转变温度,其中传导机制从库仑阻断转变为经典的临界渗流行为。N3结构允许将库仑阻断与激活过程作为一个尖锐的热转变来协调,以作为研究纳米颗粒金属材料中奇异行为的模型系统。在这些N3结构中,新的全局临界行为到局部库仑阻断控制的转变可能导致新的传感器和生物传感器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Conduction Mechanism Switching from Coulomb Blockade to Classical Critical Percolation Behavior in Disordered Nanoparticle Array

Conduction Mechanism Switching from Coulomb Blockade to Classical Critical Percolation Behavior in Disordered Nanoparticle Array

Conduction Mechanism Switching from Coulomb Blockade to Classical Critical Percolation Behavior in Disordered Nanoparticle Array

Large, open-gate transistors made from metal nanoparticle arrays offer possibilities to build new electronic devices, such as sensors. A nanoparticle necklace network (N3) of Au particles from 300 K to cryogenic temperatures exhibit a nonohmic IVd behavior, I ≈ (VdVT)ζ, where VT is a conduction gap and ζ is a constant critical exponent. The conduction gap in N3, made from disordered networks of 1D chains of 10 nm diameter Au particles exhibits room temperature (RT) gating. Although the I–Vd behavior at RT is identical to Coulomb blockade, the conduction is modulated by field-assisted tunneling exhibiting classical critical behavior. In this study, based on three results, invariance of VT on gating, invariance of VT on temperature, and zero–bias conductance, a sharp transition temperature at ≈140 K is discovered where the conduction mechanism switches from Coulomb blockade to classical critical percolation behavior. The N3 architecture allows the reconciliation of the Coulomb blockade versus activation process as a sharp thermal transition to serve as a model system to study the exotic behavior in nanogranular-metallic materials. The novel global critical behavior to local Coulomb blockade governed transition in these N3 architectures may potentially lead to novel sensors and biosensors.

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来源期刊
Advanced Electronic Materials
Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
11.00
自引率
3.20%
发文量
433
期刊介绍: Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.
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