自对齐多图形线切方法的创新

微电子制造学报 Pub Date : 2019-01-01 DOI:10.33079/jomm.19020301

Jeff Shu, Stone Break Rd Extension Malta Ny Globalfoundries

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引用次数: 1

摘要

摘要:自对准多模式(SAMP)技术可以在EUV光刻技术成熟之前实现半导体微缩。从理论上讲，任何小尺寸的节距都可以通过在同一晶圆上重复SADP来实现，但由于节距行走和线切割必须通过光刻而不是自对准方法来完成，因此存在挑战。由于边缘放置误差(EPE)，线切割可能成为30nm以下间距的问题。本文讨论了近年来关于自对齐多重图纹后线切的一些新思想。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Innovation on Line Cut Methods of Self-aligned Multiple Patterning

Abstract: Self-aligned multiple patterning (SAMP) can enable the semiconductor scaling before EUV lithography becomes mature for industry use. Theoretically any small size of pitch can be achieved by repeating SADP on same wafer but with challenges of pitch walking and line cut since line cut has to be done by lithography instead of self-aligned method. Line cut can become an issue at sub-30nm pitch due to edge placement error (EPE). In this paper we will discuss some recent novel ideas on line cut after self-aligned multiple patterning.

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微电子制造学报

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0.00%

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审稿时长

4 weeks