基于深度强化学习的高性能固态硬盘目标阻抗提取新方法PDN优化设计

Jinwook Song;Daniel Hyunsuk Jung;Jaeyoung Shin;Chunghyun Ryu;Youngjun Ko;Sungwoo Jin;Soyoung Jung;Kyungsuk Kim;Youngmin Ku;Jung-Hwan Choi;Sunghoon Chun;Jonggyu Park
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引用次数: 3

摘要

在本文中,我们首先提出并演示了一种新的基于目标阻抗(Z)提取的高性能固态驱动器(SSD)产品最优配电网(PDN)设计方法。所建议的方法不是使用芯片功率模型(CPM)的电流分布,而是使用测量的电流谱和分层PDN-Z模型来计算目标Z。我们使用专门为电流探测设计的测试插入器,在不中断正常操作的情况下,成功地测量了SSD设备上的存储器封装所消耗的PCB级电流。然后,使用分层PDN-Z模型的Y矩阵将测量的PCB级电流转换为芯片级电流值。与提取CPM电流模型的模拟时间相比,所提出的电流测量相对没有时间限制,因此,基于测量的电流频谱来计算覆盖宽带频率范围的target-Z。此外,使用深度Q学习算法有效地选择了去耦电容器等无源元件,以满足所提出方法提取的目标-Z,并优化PDN设计。最后,我们在模拟和测量演示中首次验证了采用优化PDN设计的量产SSD产品满足目标电压纹波。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Novel Target-Impedance Extraction Method-Based Optimal PDN Design for High-Performance SSD Using Deep Reinforcement Learning
In this article, we first propose and demonstrate a novel target-impedance (Z) extraction based optimal power distribution network (PDN) design methodology for high performance solid-state-drive (SSD) products. Instead of using the current profile of a chip power models (CPMs), the suggested methodology uses both measured current spectra and hierarchical PDN-Z models for target-Z calculation. We successfully measured the PCB-level current consumed by a memory package on SSD device using a test interposer specifically designed for current probing without interrupting the normal operations. Then, the measured PCB-level current is converted to the chip-level current value using Y-matrix of the hierarchical PDN-Z model. Compared with the simulation time for extracting a CPM current model, the proposed current measurement has relatively no time limit and, therefore, the target-Z covering a broadband frequency range is calculated based on the measured current spectrum. In addition, passive components such as decoupling capacitor are effectively selected using the deep-Q learning algorithm to satisfy the target- Z extracted by the proposed method and to optimize the PDN design. Finally, we verified for the first time that the mass-produced SSD product with the optimized PDN design satisfies the target voltage ripple in both simulation and measurement demonstrations.
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