杂质掺杂和界面强化提高铜双大马士革互连的可靠性

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2007-07-23 DOI:10.1109/TED.2007.901265

Munehiro Tada;Mari Abe;Naoya Furutake;Fuminori Ito;Takashi Tonegawa;Makoto Sekine;Yoshihiro Hayashi

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引用次数: 26

摘要

研究了65nm节点双镶嵌互连中由电迁移（EM）引起的空穴成核和生长，并阐明了杂质掺杂以及铜对覆盖电介质层（CAP）的粘附强度的影响。研究发现，铜线的表面还原处理提高了其与SiCN CAP的粘附性，延长了过孔底部空隙的孵育时间。铝掺杂在抑制空穴成核和生长方面都是有效的。因此，与传统纯铜相比，具有强铜/CAP界面的铝掺杂铜合金将EM寿命提高了50倍。这些结果清楚地表明，阻断空位通过晶界和铜/CAP界面的迁移路径对于提高EM可靠性至关重要。

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Improving Reliability of Copper Dual-Damascene Interconnects by Impurity Doping and Interface Strengthening

Electromigration (EM)-derived void nucleation and growth in 65-nm-node dual-damascene interconnects were investigated, and the effects of impurity doping as well as copper adhesion strength to a capping-dielectric layer (CAP) are clarified. It is found that surface-reductive treatment of the copper line improves its adhesion to the SiCN-CAP, elongating the incubation time of voiding at the via bottom. An aluminum doping is effective in suppressing both the void nucleation and growth. Consequently, an aluminum-doped copper alloy with the strong copper/CAP interface improves the EM lifetime by 50 times compared to that of a conventional pure copper. These results clearly indicate that blocking migration paths of vacancies through both grain boundaries and the copper/CAP interface is essential in improving the EM reliability.

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.