光响应性增强PbS量子点/石墨烯/硅近红外光电探测器

IF 2.1 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Nanotechnology Pub Date : 2023-08-29 DOI:10.1109/TNANO.2023.3309898

Junfan Wang;Jun Chen

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引用次数: 0

摘要

石墨烯的高载流子迁移率，加上胶体量子点易于操作和良好的光学特性，为下一代光电探测器提供了高性能材料。在本文中，我们研究了PbS量子点/石墨烯/硅近红外(NIR)光电探测器。通过在石墨烯和硅之间插入一层Al2O3来减少载流子的隧穿，并通过液相交换在石墨烯上自旋涂覆PbS量子点形成薄膜以取代配体，从而提高了PbS量子点/石墨烯/Si近红外光电探测器的器件性能。在1550 nm入射光下，探测器的响应度为0.16 A/W。我们的工作有助于相关近红外硅基光电探测器的研究。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Photoresponsivity-Enhanced PbS Quantum Dots/Graphene/Silicon Near-Infrared Photodetectors

The high carrier mobility in graphene, together with the ease of handling and good optical properties of colloidal quantum dots, provide high-performance materials for next-generation photodetectors. In this article, we investigated PbS quantum dots/graphene/Si near-infrared (NIR) photodetectors. The absorption of infrared light was increased by inserting a layer of Al ₂ O ₃ between graphene and Si to reduce the tunneling of carriers, and spin-coating PbS quantum dots on graphene to form a thin film by liquid phase exchange to replace ligands, thereby improving the device performance of PbS quantum dots/graphene/Si NIR photodetectors. Under the incident 1550 nm light, the responsivity of the detector is 0.16 A/W. Our work contributes to the study of related near-infrared silicon-based photodetectors.

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来源期刊

IEEE Transactions on Nanotechnology 工程技术-材料科学：综合

CiteScore

4.80

自引率

8.30%

发文量

审稿时长

8.3 months

期刊介绍： The IEEE Transactions on Nanotechnology is devoted to the publication of manuscripts of archival value in the general area of nanotechnology, which is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.