考虑排斥性位阻和陷阱效应的i型TFET生物传感器灵敏度分析

IF 2.1 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Nanotechnology Pub Date : 2023-08-28 DOI:10.1109/TNANO.2023.3309411

Shreyas Tiwari;Rajesh Saha

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引用次数: 0

摘要

在这项工作中，研究了一种基于介质调制(DM) i型隧道场效应管的无标签生物传感器，同时考虑了TCAD模拟器中的排斥立体效应(RSE)和陷阱效应。栅极氧化层排列在两侧源区的N+袋上，以提高隧穿速率。此外，通过提取漏极电流(ID)、能带图、表面电位(ψ)、电流比和漏极电流灵敏度(SION)对腔长(LC)、腔厚(TC)和电源电压(VDS)变化的影响，报道了陷阱杂质和位阻效应的影响。在此基础上，探讨了考虑相同非理想效应的噪声评价参数。可以看出，在考虑RSE和陷阱杂质的情况下，链霉亲和素生物分子在NoTrap和trap的灵敏度上存在误差(60.1%)。

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Sensitivity Analysis of I-Shape TFET Biosensor Considering Repulsive Steric and Trap Effects

In this work, a dielectric modulated (DM) I-shape Tunnel FET based label-free biosensor has been explored on considering both the repulsive steric effect (RSE) and trap effect in the TCAD simulator. The gate oxide layer is aligned over the N ⁺ pocket on both side source regions to enhance the tunneling rate. Moreover, the impact of trap impurities and steric effects are reported by extracting the drain current (I _D ), energy band diagram, surface potential (ψ), current ratio, and drain current sensitivity (S _ION ) for the variation in length of cavity (L _C ), thickness of cavity (T _C ), and supply voltage (V _DS ). Furthermore, the noise assessment parameter has been explored on considering of same non-idealistic effects. It is seen that on considering RSE and trap impurities, the streptavidin biomolecules report an error in sensitivity (60.1%) _NoTrap and (108.6%) _Trap .

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来源期刊

IEEE Transactions on Nanotechnology 工程技术-材料科学：综合

CiteScore

4.80

自引率

8.30%

发文量

审稿时长

8.3 months

期刊介绍： The IEEE Transactions on Nanotechnology is devoted to the publication of manuscripts of archival value in the general area of nanotechnology, which is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.