基于动态模型的半导体制造过程离散自抗扰控制

IF 2.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Haiyan Wang;Tianhong Pan;Guochu Chen
{"title":"基于动态模型的半导体制造过程离散自抗扰控制","authors":"Haiyan Wang;Tianhong Pan;Guochu Chen","doi":"10.1109/TSM.2023.3304722","DOIUrl":null,"url":null,"abstract":"The carry-over effect is a common phenomenon in the semiconductor manufacturing process, giving the process a dynamic nature. Dynamic models are more accurate but with a consequent increase in uncertainty. Therefore, it is very important to eliminate the uncertainty and disturbance at the same time. To this end, a run-to-run (RtR) control scheme based on discrete active disturbance rejection control (DADRC) is proposed in this work. The process recipe is calculated using the state error feedback law, relying on the extended state observer (ESO) to effectively suppress the total disturbance synthesized by model uncertainty and external disturbance. Considering that tool aging often leads to drift disturbances in semiconductor manufacturing processes, a model-assisted ESO with two extended states is designed to estimate process states and total disturbance. Then an optimal observer gain is derived to minimize the estimation error. Finally, the numerical and industrial cases provide compelling evidence of the effectiveness of the proposed control scheme in suppressing tool-aging drift disturbance and a remarkable degree of tolerance towards uncertainties in the system model’s order and parameters.","PeriodicalId":451,"journal":{"name":"IEEE Transactions on Semiconductor Manufacturing","volume":"36 4","pages":"636-644"},"PeriodicalIF":2.3000,"publicationDate":"2023-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Discrete Active Disturbance Rejection Control for Semiconductor Manufacturing Processes With Dynamic Models\",\"authors\":\"Haiyan Wang;Tianhong Pan;Guochu Chen\",\"doi\":\"10.1109/TSM.2023.3304722\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The carry-over effect is a common phenomenon in the semiconductor manufacturing process, giving the process a dynamic nature. Dynamic models are more accurate but with a consequent increase in uncertainty. Therefore, it is very important to eliminate the uncertainty and disturbance at the same time. To this end, a run-to-run (RtR) control scheme based on discrete active disturbance rejection control (DADRC) is proposed in this work. The process recipe is calculated using the state error feedback law, relying on the extended state observer (ESO) to effectively suppress the total disturbance synthesized by model uncertainty and external disturbance. Considering that tool aging often leads to drift disturbances in semiconductor manufacturing processes, a model-assisted ESO with two extended states is designed to estimate process states and total disturbance. Then an optimal observer gain is derived to minimize the estimation error. Finally, the numerical and industrial cases provide compelling evidence of the effectiveness of the proposed control scheme in suppressing tool-aging drift disturbance and a remarkable degree of tolerance towards uncertainties in the system model’s order and parameters.\",\"PeriodicalId\":451,\"journal\":{\"name\":\"IEEE Transactions on Semiconductor Manufacturing\",\"volume\":\"36 4\",\"pages\":\"636-644\"},\"PeriodicalIF\":2.3000,\"publicationDate\":\"2023-08-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Semiconductor Manufacturing\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10215360/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Semiconductor Manufacturing","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10215360/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

在半导体制造过程中,结转效应是一种常见的现象,使过程具有动态性。动态模型更为精确,但随之而来的是不确定性的增加。因此,同时消除不确定性和干扰是非常重要的。为此,本文提出了一种基于离散自抗扰控制(DADRC)的运行到运行(RtR)控制方案。利用状态误差反馈律计算过程配方,依靠扩展状态观测器(ESO)有效抑制模型不确定性和外部干扰综合的总扰动。针对半导体制造过程中刀具老化常导致漂移干扰的问题,设计了一种具有两扩展状态的模型辅助ESO来估计过程状态和总扰动。然后推导出最优观测器增益,使估计误差最小。最后,数值和工业实例提供了令人信服的证据,证明了所提出的控制方案在抑制刀具老化漂移干扰方面的有效性,以及对系统模型阶数和参数不确定性的显著容忍程度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Discrete Active Disturbance Rejection Control for Semiconductor Manufacturing Processes With Dynamic Models
The carry-over effect is a common phenomenon in the semiconductor manufacturing process, giving the process a dynamic nature. Dynamic models are more accurate but with a consequent increase in uncertainty. Therefore, it is very important to eliminate the uncertainty and disturbance at the same time. To this end, a run-to-run (RtR) control scheme based on discrete active disturbance rejection control (DADRC) is proposed in this work. The process recipe is calculated using the state error feedback law, relying on the extended state observer (ESO) to effectively suppress the total disturbance synthesized by model uncertainty and external disturbance. Considering that tool aging often leads to drift disturbances in semiconductor manufacturing processes, a model-assisted ESO with two extended states is designed to estimate process states and total disturbance. Then an optimal observer gain is derived to minimize the estimation error. Finally, the numerical and industrial cases provide compelling evidence of the effectiveness of the proposed control scheme in suppressing tool-aging drift disturbance and a remarkable degree of tolerance towards uncertainties in the system model’s order and parameters.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
IEEE Transactions on Semiconductor Manufacturing
IEEE Transactions on Semiconductor Manufacturing 工程技术-工程:电子与电气
CiteScore
5.20
自引率
11.10%
发文量
101
审稿时长
3.3 months
期刊介绍: The IEEE Transactions on Semiconductor Manufacturing addresses the challenging problems of manufacturing complex microelectronic components, especially very large scale integrated circuits (VLSI). Manufacturing these products requires precision micropatterning, precise control of materials properties, ultraclean work environments, and complex interactions of chemical, physical, electrical and mechanical processes.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信